K4A8G085WB-BITD vs K4A8G085WB Comparison
Detailed side-by-side comparison of K4A8G085WB-BITD by Samsung Electronics and K4A8G085WB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WB-BITD | K4A8G085WB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.80 | $5.20 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (B-die) |
| Density | 8 Gb | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 2666 Mbps | [DATA_NEEDED: speed grade data rate in Mbps] |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature | -40°C to +95°C | [DATA_NEEDED: operating temperature range] |
| Package | 78FBGA | 78-pin FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 78 | — |
| CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Row Cycle Time (tRC) | [DATA_NEEDED: tRC] | — |
| Refresh Cycle Time (tRFC) | [DATA_NEEDED: tRFC] | — |
| Interface | Parallel | — |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Operating Mode | — | DLL Enabled mode (per datasheet) |
| Speed Grade Suffixes | — | -BCRC, -BIRC, -BCTD, -BCPB (per family naming) |
| tCL/cas latency | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | [DATA_NEEDED: refresh rate 1x/2x] |
| Bank Groups | — | [DATA_NEEDED: bank/bank group count] |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Termination Voltage (VTT) | — | [DATA_NEEDED: VTT value] |