K4A8G085WB-BITD vs K4A8G085WB Vergleich
Detaillierter Direktvergleich von K4A8G085WB-BITD von Samsung Electronics und K4A8G085WB von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4A8G085WB-BITD | K4A8G085WB |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,80 | $5,20 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM (B-die) |
| Density | 8 Gb | 8 Gbit |
| Speicherorganisation | 1G x 8 | 1G x 8 |
| Datenrate | 2666 Mbps | [DATA_NEEDED: speed grade data rate in Mbps] |
| Versorgungsspannung | 1.2 V | 1.2 V |
| Betriebstemperatur | -40°C to +95°C | [DATA_NEEDED: operating temperature range] |
| Gehäuse | 78FBGA | 78-pin FBGA |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 78 | — |
| CAS-Latenz | [DATA_NEEDED: CAS Latency] | — |
| Row Cycle Time (tRC) | [DATA_NEEDED: tRC] | — |
| Refresh Cycle Time (tRFC) | [DATA_NEEDED: tRFC] | — |
| Schnittstelle | Parallel | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Operating Mode | — | DLL Enabled mode (per datasheet) |
| Speed Grade Suffixes | — | -BCRC, -BIRC, -BCTD, -BCPB (per family naming) |
| tCL/cas latency | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | [DATA_NEEDED: refresh rate 1x/2x] |
| Bank Groups | — | [DATA_NEEDED: bank/bank group count] |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Termination Voltage (VTT) | — | [DATA_NEEDED: VTT value] |