K4A8G085WB vs K4A8G085WC-BIWE Comparison
Detailed side-by-side comparison of K4A8G085WB by Samsung Electronics and K4A8G085WC-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WB | K4A8G085WC-BIWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.20 | $6.29 |
| Memory Type | DDR4 SDRAM (B-die) | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2 V | — |
| Package | 78-pin FBGA | 78-FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Mode | DLL Enabled mode (per datasheet) | — |
| Speed Grade Suffixes | -BCRC, -BIRC, -BCTD, -BCPB (per family naming) | — |
| Data Rate | [DATA_NEEDED: speed grade data rate in Mbps] | 3200 Mbps |
| tCL/cas latency | [DATA_NEEDED: CAS latency] | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | — |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x] | Auto-refresh, self-refresh |
| Bank Groups | [DATA_NEEDED: bank/bank group count] | — |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Termination Voltage (VTT) | [DATA_NEEDED: VTT value] | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Operating Temperature Range | — | -40°C to +95°C |
| Interface | — | POD-12 |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| CAS Latency | — | 22 (CL22) |
| Lead-Free | — | Yes |