K4A8G085WC-BCWE vs H5AN8G8NAFR-VKC Comparison
Detailed side-by-side comparison of K4A8G085WC-BCWE by Samsung Electronics and H5AN8G8NAFR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WC-BCWE | H5AN8G8NAFR-VKC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.38 | $4.15 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 3200 Mbps (DDR4-3200) | — |
| Supply Voltage | 1.2 V | — |
| Operating Temperature | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Package | 78FBGA | 78-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | DDR4 (parallel, double data rate) | SSTL12 |
| Application Class | Computing / Embedded main memory | — |
| Manufacturer | Samsung Electronics | — |
| Bank Group Architecture | DDR4 bank groups (8n prefetch) | Supported (per DDR4 JEDEC architecture) |
| Speed Bin Suffix | -BCWE (DDR4-3200, commercial temp) | — |
| RoHS Status | Compliant (per JLCPCB listing) | Compliant (Lead-Free & Halogen-Free) |
| Refresh | Standard DDR4 refresh mechanisms | — |
| On-Die Termination | Yes (DDR4 ODT) | — |
| Speed Grade | — | DDR4-2666 (VKC bin) |
| Supply Voltage (VDD) | — | 1.2 V |
| Burst Length | — | 8 (BL8) |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes (DLL for output skew control) |
| Process Technology | — | CMOS |
| Recommended Application | — | Main memory requiring large density and high bandwidth |