K4AAG085WM-BCWE vs H5ANAG8NBJR-VKC Comparison
Detailed side-by-side comparison of K4AAG085WM-BCWE by Samsung Electronics and H5ANAG8NBJR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4AAG085WM-BCWE | H5ANAG8NBJR-VKC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.00 | $8.60 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | 16 Gbit |
| Organization | 2G x 8 | 2G x 8 |
| Data Rate | 3200 Mbps (DDR4-3200) | — |
| Supply Voltage | 1.2 V | 1.14 V to 1.26 V (VDDQ) |
| Operating Temperature | 0C to +85C | 0C to +85C |
| Package | 78FBGA | FBGA-78 |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | DDR4 (JEDEC-standard) | — |
| Bank Group Architecture | Yes (DDR4) | — |
| Speed Grade Suffix | -BCWE | — |
| Application Class | Memory IC / Storage Component | — |
| Power Reduction vs DDR3 | Approx. 25% lower (per Samsung DDR4 literature) | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant, Lead-Free and Halogen-Free |
| MSL Level | [DATA_NEEDED: MSL level] | — |
| Speed Grade | — | DDR4-2666 (2666 Mbps/pin) |
| Clock Frequency | — | 1.6 GHz (internal interface per distributor data) |
| Standby Current | — | 30 mA (operating, per distributor listing) |
| Auto Self-Refresh | — | Yes |
| Data Mask Function | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Asynchronous Reset | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Auto Precharge | — | Yes |
| Refresh Interval | — | [DATA_NEEDED: tREFI refresh interval] |