K4AAG085WM-BCWE vs H5ANAG8NBJR-VKC 对比
详细并排对比 K4AAG085WM-BCWE 出自 Samsung Electronics 和 H5ANAG8NBJR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4AAG085WM-BCWE | H5ANAG8NBJR-VKC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.00 | $8.60 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | 16 Gbit |
| 存储组织 | 2G x 8 | 2G x 8 |
| 数据速率 | 3200 Mbps (DDR4-3200) | — |
| 电源电压 | 1.2 V | 1.14 V to 1.26 V (VDDQ) |
| 工作温度 | 0C to +85C | 0C to +85C |
| 封装 | 78FBGA | FBGA-78 |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | DDR4 (JEDEC-standard) | — |
| Bank Group Architecture | Yes (DDR4) | — |
| Speed Grade Suffix | -BCWE | — |
| Application Class | Memory IC / Storage Component | — |
| Power Reduction vs DDR3 | Approx. 25% lower (per Samsung DDR4 literature) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant, Lead-Free and Halogen-Free |
| MSL 等级 | [DATA_NEEDED: MSL level] | — |
| Speed Grade | — | DDR4-2666 (2666 Mbps/pin) |
| Clock Frequency | — | 1.6 GHz (internal interface per distributor data) |
| Standby Current | — | 30 mA (operating, per distributor listing) |
| Auto Self-Refresh | — | Yes |
| Data Mask Function | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Asynchronous Reset | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Auto Precharge | — | Yes |
| Refresh Interval | — | [DATA_NEEDED: tREFI refresh interval] |