K4AAG165WM-BCRC vs H5ANAG8NCMR-VKC Comparison
Detailed side-by-side comparison of K4AAG165WM-BCRC by Samsung Electronics and H5ANAG8NCMR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4AAG165WM-BCRC - 16Gb DDR4 x16 SDRAM 3200Mbps | Samsung
K4AAG165WM-BCRC ✓ Active
Specification Comparison
| Parameter | K4AAG165WM-BCRC | H5ANAG8NCMR-VKC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $22.60 | $8.05 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | — |
| Organization | 1G x 16 | — |
| Data Rate | 3200 Mbps | 2666 Mbps/pin (DDR4-2666) |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Interface | DDR4 (SSTL-12) | — |
| Package | 96-ball FBGA | FBGA-78 |
| Mounting Type | Surface Mount | Surface Mount |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Data Mask Function | Yes | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range for K4AAG165WM-BCRC] | [DATA_NEEDED: operating temperature range] |
| CAS Latency (CL) | [DATA_NEEDED: CAS latency at 3200 Mbps] | — |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Memory Size | — | 16 Gb |
| Memory Organization | — | 2G x 8 |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Speed Grade | — | VK (per SK hynix speed-bin suffix) |
| Power Class | — | Normal Power |
| Bank Groups | — | 4 |
| Banks Total | — | 16 |
| CAS Latency | — | [DATA_NEEDED: CAS latency for VK speed bin] |
| Packaging | — | [DATA_NEEDED: standard packing quantity] |
| Manufacturer Process | — | CMOS DRAM |