K4AAG165WM-BCRC - 16Gb DDR4 x16 SDRAM 3200Mbps | Samsung
MPN: K4AAG165WM-BCRC ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $29.5 | $29.50 |
| 10 | $27.8 | $278.00 |
| 100 | $25.9 | $2,590.00 |
| 500 | $24.2 | $12,100.00 |
| 1,000 | $22.6 | $22,600.00 |
Drop-in alternatives for K4AAG165WM-BCRC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4AAG165WA-BCRC
✅ Drop-In✓ In Stock
$64.9 / Unit
View Datasheet →K4AAG165WA-BCWE
✅ Drop-In✓ In Stock
$62.4 / Unit
View Datasheet →K4AAG165WA-BCTD
✅ Drop-In✓ In Stock
$60.59 / Unit
View Datasheet →K4AAG165WC-BCWE
✅ Drop-In📋 Reference alternative (not in catalog)
K4A8G165WC-BCRC
✅ Drop-In✓ In Stock
$23 / Unit
View Datasheet →K4A4G165WE-BCRC
✅ Drop-In📋 Reference alternative (not in catalog)
K4AAG165WM-BCRC Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 16 Gb |
| Organization | 1G x 16 |
| Data Rate | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V |
| Interface | DDR4 (SSTL-12) |
| Package | 96-ball FBGA |
| Mounting Type | Surface Mount |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| CRC Function | Yes |
| ZQ Calibration | Yes |
| Dynamic On-Chip Termination | Yes |
| Data Mask Function | Yes |
| RoHS Status | Compliant |
K4AAG165WM-BCRC 96-ball fbga Pin Configuration Guide
Complete pinout information for K4AAG165WM-BCRC (96-ball fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4AAG165WM-BCRC.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4AAG165WM-BCRC is suitable for 6 applications: Industrial Controllers, Networking and Telecommunications Equipment, Embedded Computing Modules, Consumer Electronics and Set-Top Platforms, Automotive Infotainment and Telematics, Test and Measurement Instruments.
Industrial Controllers
The K4AAG165WM-BCRC fits industrial controllers that need high-capacity volatile memory for data logging, protocol buffering, and real-time processing. Its 16Gb x16 organization provides 2 GB per chip in a single 96-ball FBGA, reducing component count versus stacked 8Gb solutions. The 1.2V supply cuts power dissipation in sealed, fanless enclosures, while CRC and asynchronous reset improve fault robustness in electrically noisy factory environments. Designers typically place it on 16-bit or 32-bit DDR4 buses with dynamic ODT enabled, and the 3200 Mbps class data rate sustains deterministic control-loop latencies without memory bottlenecks.
Recommended
Networking and Telecommunications Equipment
Switches, routers, and telecom line cards require deep packet buffers and fast table lookups, making a 3200 Mbps DDR4 x16 device an efficient main-memory choice. The K4AAG165WM-BCRC supplies 2 GB in a compact footprint, and its bank-group architecture allows the memory controller to interleave bursts across groups, maximizing effective bandwidth on heavily loaded forwarding planes. CRC protects address/command integrity on long traces typical of 1U chassis layouts, and ZQ calibration keeps on-die termination accurate across temperature swings in telecom cabinets. Using x16 parts simplifies 16/32-bit bus routing versus byte-wide x8 stitching.
Recommended
Embedded Computing Modules
SoM and COM Express designs integrate the K4AAG165WM-BCRC to deliver 2 GB or more of soldered-down DRAM per module, avoiding DIMM sockets and their height, cost, and reliability penalties. The 96-ball FBGA solder attachment withstands shock and vibration in mobile and vehicular embedded platforms. At 3200 Mbps the part feeds modern application processors without bottlenecking multimedia workloads, while 1.2V operation lowers module thermal design power. DDR4 fly-by routing with per-byte dynamic ODT, supported natively by this device, maintains signal integrity across the four to eight chip loads typical on module PCBs.
Recommended
Consumer Electronics and Set-Top Platforms
Set-top boxes, smart TVs, and streaming media players use x16 DDR4 devices as the primary system memory for 4K video buffering and application execution. The K4AAG165WM-BCRC offers density headroom for multi-stream HEVC decode frame buffers at 3200 Mbps bandwidth, and its 1.2V operation meets stringent consumer standby power budgets. The x16 organization lets cost-optimized SoCs use a single-chip 16-bit bus, minimizing BOM cost and layer count. Data mask support enables efficient partial-frame writes during graphics compositing, reducing bus turnaround overhead in UI rendering pipelines.
Recommended
Automotive Infotainment and Telematics
DDR4 SDRAM of this class is used in automotive infotainment head units and telematics gateways (verify the temperature suffix; the Q1/AEC-Q100 grade should be confirmed for automotive use). The 16Gb density supports navigation map caching, multi-display frame buffers, and over-the-air update staging, while 3200 Mbps bandwidth keeps GPU-accelerated HMI rendering fluid. Soldered FBGA mounting survives -40C to +85C cabin environments better than socketed memory, and CRC plus asynchronous reset support functional-safety architectures that detect and recover from transient bus faults during vehicle operation.
Recommended
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators require deep capture memory with sustained write bandwidth. The K4AAG165WM-BCRC provides 2 GB per chip at 3200 Mbps, letting instrument front-ends stream acquisition data without dropped samples. Its CRC and asynchronous reset features improve measurement confidence by protecting the acquisition pipeline, and ZQ-calibrated ODT preserves eye diagrams across the densely routed capture boards typical of bench instruments. The x16 data width simplifies interleaved multi-channel capture architectures where each channel writes 16-bit samples to a dedicated DRAM.
Recommended
Recommended Products Summary
Engineering reference data for K4AAG165WM-BCRC — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4AAG165WA-BCRC | K4AAG165WC-BCWE | K4A8G165WC-BCRC | K4A4G165WE-BCRC |
|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Package | 96-ball FBGA | 96-ball FBGA - same | 96-ball FBGA - same | 96-ball FBGA - same | 96-ball FBGA - same |
| Density | 16 Gb | 16 Gb | 16 Gb | 8 Gb | 4 Gb |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 512M x 16 | 256M x 16 |
| Data Rate | 3200 Mbps | 2666 Mbps | 3200 Mbps | [DATA_NEEDED] | [DATA_NEEDED] |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | [DATA_NEEDED: K4AAG165WM-BCRC operating temperature] | [DATA_NEEDED] | 0C to +85C (LCSC) | [DATA_NEEDED] | 0C to +95C (LCSC) |
| Key Features | Auto precharge, async reset, CRC, ZQ cal, dynamic ODT, data mask | Same DDR4 feature set | Same DDR4 feature set | Auto precharge, async reset, CRC, dynamic ODT, ZQ cal | Auto precharge, async reset, CRC, ZQ cal, dynamic ODT, data mask |
Key Differentiators
- Highest speed grade in the Samsung 16Gb x16 family (vs K4AAG165WA-BCRC)
- Maximum density on the x16 FBGA-96 footprint (vs K4A8G165WC-BCRC)
- Matches WC-grade 3200 Mbps siblings with broader sourcing (vs K4AAG165WC-BCWE)
Design Notes
Route the DDR4 x16 bus following JEDEC-recommended topologies: fly-by for address/command/controls and point-to-point for DQ/DQS/DM per byte lane. Keep DQS to its DQ group length-matched within +/-25 mils and target 40-ohm single-ended trace impedance on a 4-layer or better stackup. Place the 240-ohm RZQ resistor to VSSGND with 1% tolerance and short, direct traces - ZQ calibration accuracy at 3200 Mbps depends directly on this resistor precision.
Estimate: a 16Gb DDR4 active at 3200 Mbps typically draws 400-600 mA average from the 1.2V rail depending on access pattern - size the VDD/VDDQ regulator (for example TPS54218 family) with headroom above 1 A peak per device. Decouple with at least 10x 100 nF ceramics plus bulk 47 uF within 10 mm of VDD balls, and use a dedicated VTT termination rail if the controller requires external termination. Samsung datasheet IDD figures should be used for final thermal and power budgets.
Do not substitute speed grades without updating controller timing registers: replacing a BCRC (3200 Mbps class) part with a WA grade (2666 Mbps) part requires derating CL, tRCD, tRP, and tRC in the memory controller configuration, or the system will fail training. Also confirm the die revision letter in the Samsung ordering-information table matches your qualified BOM - DDR4 vendors ship multiple die revisions on the same base MPN with slightly different AC timing tables.
Compliance Information
RoHS compliant per Samsung DDR4 family product pages. AEC-Q100 qualification not claimed for standard K4A-series DDR4 - confirm automotive suffix availability with Samsung for automotive programs.
