K4AAG165WM-BCWE vs K4AAG085WM-BCWE Comparison
Detailed side-by-side comparison of K4AAG165WM-BCWE by Samsung Electronics and K4AAG085WM-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4AAG165WM-BCWE | K4AAG085WM-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $54.65 | $7.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gb |
| Organization | 256M x 16 (1G x 16) | 2G x 8 |
| Data Rate | 3200 Mbps | 3200 Mbps (DDR4-3200) |
| Interface | Parallel (DDR4) | DDR4 (JEDEC-standard) |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Access Time (Clock Cycle Time) | [DATA_NEEDED: tCK for BCWE bin] | — |
| CAS Latency | [DATA_NEEDED: CL at 3200 Mbps] | — |
| Bank Groups | 4 (x16 configuration) | — |
| Burst Length | 8 | — |
| Package | 78-ball FBGA | 78FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: temperature range for WM-BCWE] | 0C to +85C |
| Die Revision | W (WM suffix) | — |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Operating Frequency | 1600 MHz (DDR, 3200 Mbps) | — |
| Supply Voltage | — | 1.2 V |
| Bank Group Architecture | — | Yes (DDR4) |
| Speed Grade Suffix | — | -BCWE |
| Application Class | — | Memory IC / Storage Component |
| Power Reduction vs DDR3 | — | Approx. 25% lower (per Samsung DDR4 literature) |
| MSL Level | — | [DATA_NEEDED: MSL level] |