K4AAG165WM-BCWE vs K4AAG085WM-BCWE 对比
详细并排对比 K4AAG165WM-BCWE 出自 Samsung Electronics 和 K4AAG085WM-BCWE 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4AAG165WM-BCWE | K4AAG085WM-BCWE |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | DRAM | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $54.65 | $7.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gb |
| 存储组织 | 256M x 16 (1G x 16) | 2G x 8 |
| 数据速率 | 3200 Mbps | 3200 Mbps (DDR4-3200) |
| 接口 | Parallel (DDR4) | DDR4 (JEDEC-standard) |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Access Time (Clock Cycle Time) | [DATA_NEEDED: tCK for BCWE bin] | — |
| CAS 延迟 | [DATA_NEEDED: CL at 3200 Mbps] | — |
| Bank Groups | 4 (x16 configuration) | — |
| Burst Length | 8 | — |
| 封装 | 78-ball FBGA | 78FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: temperature range for WM-BCWE] | 0C to +85C |
| Die Revision | W (WM suffix) | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| Operating Frequency | 1600 MHz (DDR, 3200 Mbps) | — |
| 电源电压 | — | 1.2 V |
| Bank Group Architecture | — | Yes (DDR4) |
| Speed Grade Suffix | — | -BCWE |
| Application Class | — | Memory IC / Storage Component |
| Power Reduction vs DDR3 | — | Approx. 25% lower (per Samsung DDR4 literature) |
| MSL 等级 | — | [DATA_NEEDED: MSL level] |