K4B4G1646D-BCK0 vs K4B4G1646D-BYK00 Comparison
Detailed side-by-side comparison of K4B4G1646D-BCK0 by Samsung Electronics and K4B4G1646D-BYK00 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BCK0
K4B4G1646D-BCK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646D-BCK0 β ActiveSamsung Electronics
K4B4G1646D-BYK00
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 β ActiveSpecification Comparison
| Parameter | K4B4G1646D-BCK0 | K4B4G1646D-BYK00 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.30 | $7.50 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Number of Banks | 8 | β |
| Data Rate | 1600 Mbps per pin | 1600 Mbps |
| Clock Frequency | 800 MHz | β |
| Supply Voltage (VDD) | 1.35V (1.283V to 1.45V) | β |
| Supply Voltage (VDDQ) | 1.35V (1.283V to 1.45V) | β |
| CAS Latency | 11 (programmable) | Programmable |
| Burst Length | 8, 4 | β |
| Package | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball TFBGA |
| Operating Temperature | 0Β°C to 95Β°C (Tc) | 0Β°C to 85Β°C |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes | Yes |
| Supply Voltage | β | 1.35 V (also operates at 1.5 V) |
| Number of Terminals | β | 96 |
| Additional Features | β | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination |
| Package Shape | β | RECTANGULAR |
| Temperature Grade | β | OTHER |