K4B4G1646D-BCK0 vs K4B4G1646D-BYK00 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646D-BCK0 sa pamamagitan ng Samsung Electronics at K4B4G1646D-BYK00 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4B4G1646D-BCK0 | K4B4G1646D-BYK00 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Number of Banks | 8 | — |
| Rate ng Data | 1600 Mbps per pin | 1600 Mbps |
| Clock Frequency | 800 MHz | — |
| Supply Voltage (VDD) | 1.35V (1.283V to 1.45V) | — |
| Supply Voltage (VDDQ) | 1.35V (1.283V to 1.45V) | — |
| Latensya ng CAS | 11 (programmable) | Programmable |
| Burst Length | 8, 4 | — |
| Packhaging | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball TFBGA |
| Temperature na Operasyon | 0°C to 95°C (Tc) | 0°C to 85°C |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Wala sa Halogen | Yes | Yes |
| Volte ng Pagbibigay | — | 1.35 V (also operates at 1.5 V) |
| Number of Terminals | — | 96 |
| Additional Features | — | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination |
| Package Shape | — | RECTANGULAR |
| Temperature Grade | — | OTHER |