K4B4G1646D-BCK00 vs K4B4G1646Q Comparison
Detailed side-by-side comparison of K4B4G1646D-BCK00 by Samsung Electronics and K4B4G1646Q by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCK00 ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646D-BCK00 | K4B4G1646Q |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.90 | $6.50 |
| Density | 4 Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Speed Grade | DDR3-1600 (800 MHz) | — |
| Data Rate | 1600 Mbps/pin | 1866 Mbps (PC3-14900) |
| Supply Voltage | 1.35V (1.283V to 1.45V) | 1.35V |
| I/O Voltage | 1.35V | — |
| Package | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball FBGA |
| Operating Temperature | 0°C to 95°C (Tcase) | [DATA_NEEDED: Operating temperature range] |
| Number of Banks | 8 | — |
| CAS Latency | 11 (at 1600 Mbps) | Programmable |
| Burst Length | 8, 4 (with burst chop) | 8 (BL8) |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | Yes |
| Data Bus Width | — | 16 bits |
| Die | — | Q-die |
| RoHS Compliant | — | Yes |
| On-Die Termination | — | Yes (ODT) |