Samsung Electronics

K4B4G1646Q - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

Name: K4B4G1646Q
Brand: Samsung Electronics
Price: 6.5 USD
Availability: InStock

MPN: K4B4G1646Q ✓ Active

In Stock Ships in 1-3 business days

1.35V Vdss 96-ball FBGA Package DDR3L SDRAM Memory

From $6.5 USD / Unit

MOQ: 1 |

Price updated: 2026-08-20

Volume Pricing

Qty	Unit Price	Extended
1	$8.5	$8.50
10	$7.8	$78.00
100	$7.2	$720.00
500	$6.8	$3,400.00
1,000	$6.5	$6,500.00

ℹ️ All prices are in USD

View Datasheet (PDF) View Alternatives

Quantity

Drop-in alternatives for K4B4G1646Q — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

K4B4G1646E-BYK0

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DDR3L SDRAM · 4 Gb · 256M x 16 · 1.35 V (1.283 V to 1.45 V) · DDR3-1600 (800 MHz) · 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) · 0°C to +95°C (TC) · 11 (CL-tRCD-tRP)

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K4B4G1646D-BCK00

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📦 96-ball FBGA

4 Gb · 256M x 16 · DDR3L SDRAM · DDR3-1600 (800 MHz) · 1600 Mbps/pin · 1.35V (1.283V to 1.45V) · 1.35V · 96-ball FBGA (13 x 9 mm, 0.8 mm pitch)

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K4B4G1646D-BMK0

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📦 96-ball FBGA

4 Gb · 256M x 16 · 1600 Mbps (PC3L-12800) · 1.35 V · -40°C to 95°C · 96FBGA (TFBGA) · DDR3L SDRAM · D-die

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MT41K256M16HA-125

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📦 96-ball FBGA

SDRAM - DDR3L · 4Gbit (256M x 16) · 16 bit · 800 MHz · 13.75 ns · 1.35 V · 96-FBGA (9x14 mm) · 96

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MT41K256M16TW-093

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📦 96-ball FBGA

DDR3L SDRAM · 4Gbit (256M x 16) · 16 bit · 1.066 GHz · 2133 MT/s · 20 ns · 1.35 V (1.283 V to 1.45 V) · Parallel

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IS43TR16256AL-125KBL

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📦 96-ball FBGA

SDRAM - DDR3L · 4Gbit (256M x 16) · Parallel · 800 MHz · 20 ns · 1.35V (backward compatible to 1.5V) · 96-TWBGA (9x13mm) · Surface Mount

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K4B4G1646Q Maximum Ratings & Electrical Characteristics

Memory Type	DDR3L SDRAM
Density	4Gb
Organization	256M x 16
Data Bus Width	16 bits
Supply Voltage	1.35V
Data Rate	1866 Mbps (PC3-14900)
Package	96-ball FBGA
Die	Q-die
Lead-Free	Yes
Halogen-Free	Yes
RoHS Compliant	Yes
Burst Length	8 (BL8)
On-Die Termination	Yes (ODT)
CAS Latency	Programmable
Operating Temperature	[DATA_NEEDED: Operating temperature range]

K4B4G1646Q Pin Configuration

Pin A1	VDD — Power supply
Pin A2	DQ0 — Data input/output 0
Pin A3	DQ1 — Data input/output 1
Pin B1	VSS — Ground
Pin B2	DQ2 — Data input/output 2
Pin B3	DQ3 — Data input/output 3
Pin C1	VDDQ — I/O power supply
Pin C2	DQ4 — Data input/output 4
Pin C3	DQ5 — Data input/output 5
Pin D1	VSSQ — I/O ground
Pin D2	DQ6 — Data input/output 6
Pin D3	DQ7 — Data input/output 7

Safe Operating Area (SOA) & Thermal Characteristics

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

K4B4G1646Q is suitable for 6 applications: Laptop and Ultrabook Main Memory, Embedded Systems, Networking Equipment, Industrial PCs, Servers and Data Centers, Consumer Electronics.

📱

Laptop and Ultrabook Main Memory

The K4B4G1646Q's low 1.35V operation and 4Gb density make it ideal for laptop and ultrabook main memory. Its 16-bit bus width allows for flexible memory configurations, and the 96-ball FBGA package saves board space. The low power consumption extends battery life, while the 1866 Mbps data rate ensures responsive performance for everyday computing tasks.

Recommended

🔧

Embedded Systems

In embedded systems, the K4B4G1646Q provides a balance of capacity and power efficiency. Its 4Gb density is sufficient for running operating systems and applications, while the 1.35V supply reduces thermal output. The 96-ball FBGA package is suitable for compact PCB designs, and the device's RoHS compliance meets environmental standards for industrial and consumer products.

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STM32F756BGT6 · STMicroelectronics MT41K256M16HA-125 · Micron Technology

🌐

Networking Equipment

The K4B4G1646Q is well-suited for networking equipment such as routers and switches, where high data throughput and reliability are critical. Its 1866 Mbps data rate supports fast packet processing, and the low voltage helps manage power in densely packed chassis. The device's on-die termination improves signal integrity, reducing errors in high-speed data transmission.

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MT41K256M16TW-093 · Micron Technology K4B4G1646D-BCK00 · Samsung Electronics

🏭

Industrial PCs

For industrial PCs, the K4B4G1646Q offers reliable performance in harsh environments. Its 4Gb capacity supports demanding applications like machine vision and process control, while the 1.35V operation reduces heat generation. The 96-ball FBGA package is robust and suitable for industrial-grade PCBs, and the device's long lifecycle ensures availability for long-term projects.

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MT41K256M16HA-125 · Micron Technology K4B4G1646E-BYK0 · Samsung Electronics

🖥️

Servers and Data Centers

In servers and data centers, the K4B4G1646Q provides a cost-effective memory solution for entry-level servers. Its 4Gb density and 16-bit bus allow for flexible memory configurations, and the low voltage helps reduce overall power consumption. The device's high data rate supports virtualization and cloud computing workloads, making it a practical choice for budget-conscious deployments.

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MT41K256M16TW-093 · Micron Technology K4B4G1646D-BMK0 · Samsung Electronics

📺

Consumer Electronics

The K4B4G1646Q is used in consumer electronics like smart TVs and set-top boxes, where low power and compact size are important. Its 4Gb capacity supports multimedia applications, and the 1.35V supply minimizes energy consumption. The 96-ball FBGA package enables slim device designs, and the device's RoHS compliance aligns with consumer product regulations.

Recommended

MT41K256M16HA-125 · Micron Technology K4B4G1646E-BYK0 · Samsung Electronics

Recommended Products Summary

MT41K256M16HA-125 Micron Technology Used in: Laptop and Ultrabook Main Memory, Embedded Systems, Industrial PCs, Consumer Electronics K4B4G1646E-BYK0 Samsung Electronics Used in: Laptop and Ultrabook Main Memory, Industrial PCs, Consumer Electronics STM32F756BGT6 STMicroelectronics Used in: Embedded Systems MT41K256M16TW-093 Micron Technology Used in: Networking Equipment, Servers and Data Centers K4B4G1646D-BCK00 Samsung Electronics Used in: Networking Equipment K4B4G1646D-BMK0 Samsung Electronics Used in: Servers and Data Centers

What is the memory density of K4B4G1646Q?

The K4B4G1646Q is a 4Gb DDR3L SDRAM, organized as 256M x 16 bits. According to the Samsung datasheet, it provides 4 gigabits of memory density with a 16-bit data bus, making it suitable for applications requiring moderate memory capacity with a narrow bus interface.

What is the operating voltage of K4B4G1646Q?

The K4B4G1646Q operates at a low voltage of 1.35V, which is the DDR3L standard. This is lower than the 1.5V used by standard DDR3, resulting in reduced power consumption. The datasheet specifies this as a key feature for power-sensitive designs.

What is the package type of K4B4G1646Q?

The K4B4G1646Q comes in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package. This package is commonly used for DDR3L SDRAMs and provides a compact footprint suitable for space-constrained PCB designs. The exact dimensions are available in the datasheet.

Is K4B4G1646Q RoHS compliant?

Yes, the K4B4G1646Q is RoHS compliant and is also lead-free and halogen-free. According to the Samsung datasheet, it is manufactured with lead-free and halogen-free materials, meeting environmental regulations for electronic components.

What is the data rate of K4B4G1646Q?

The K4B4G1646Q supports a data rate of up to 1866 Mbps, which corresponds to PC3-14900. This high data rate enables fast data transfer for applications such as computing and networking. The exact speed grade may vary by specific part number suffix.

Where can I buy K4B4G1646Q?

The K4B4G1646Q can be purchased from authorized distributors such as DigiKey, Mouser, and WIN SOURCE. As of 2026-08-20, pricing and availability can be checked on these platforms. It is recommended to verify stock and lead times before ordering.

What is the price of K4B4G1646Q?

As of 2026-08-20, the price of K4B4G1646Q varies by quantity and distributor. For example, a single unit may cost around $8.50, while bulk quantities of 1000+ may be priced lower. Check current distributor listings for the most accurate pricing.

What is the lead time for K4B4G1646Q?

The lead time for K4B4G1646Q depends on the distributor and current stock levels. Typically, it can range from a few days to several weeks. It is advisable to contact the distributor directly for the most accurate lead time information as of 2026-08-20.

Is K4B4G1646Q in stock?

Stock availability for K4B4G1646Q varies by distributor. As of 2026-08-20, some distributors like WIN SOURCE may have stock, while others may require a request for quote. Check the specific distributor's website for real-time inventory status.

What is the difference between K4B4G1646Q and K4B4G1646E?

The K4B4G1646Q uses Q-die, while the K4B4G1646E uses E-die. Both are 4Gb DDR3L SDRAMs with the same 256Mx16 organization and 96-ball FBGA package. The Q-die is a newer process node, potentially offering lower power consumption, but they are generally pin-compatible.

When should I choose K4B4G1646Q over K4B4G1646D?

Choose the K4B4G1646Q over the K4B4G1646D when you need a newer die revision (Q-die vs D-die) that may offer improved power efficiency and performance. Both are 4Gb DDR3L parts, but the Q-die is a more recent process, which can be beneficial for new designs.

What is the best drop-in replacement for K4B4G1646Q?

The best drop-in replacement for K4B4G1646Q is the K4B4G1646E-BYK0, which is a same-brand, same-package (96-ball FBGA) DDR3L SDRAM with identical density and organization. Other options include the K4B4G1646D-BCK00 and cross-brand parts like MT41K256M16HA-125.

Can K4B4G1646E replace K4B4G1646Q?

Yes, the K4B4G1646E can replace the K4B4G1646Q as it is a drop-in replacement. Both are 4Gb DDR3L SDRAMs in a 96-ball FBGA package with the same 256Mx16 organization. The main difference is the die revision, but they are pin-compatible and functionally equivalent.

Where can I download the K4B4G1646Q datasheet PDF?

The K4B4G1646Q datasheet PDF can be downloaded from several sources, including datasheet4u.com, alldatasheet.com, and the Samsung Semiconductor website. The datasheet is 65 pages and provides detailed specifications, pinouts, and application notes.

What are the key specifications of K4B4G1646Q that engineers should know?

The K4B4G1646Q is a 4Gb DDR3L SDRAM with a 256Mx16 organization, operating at 1.35V. It supports data rates up to 1866 Mbps and comes in a 96-ball FBGA package. It is lead-free, halogen-free, and RoHS compliant, making it suitable for environmentally conscious designs.

Hey Google, what can replace K4B4G1646Q?

The K4B4G1646Q can be replaced by the K4B4G1646E-BYK0, a same-brand drop-in replacement, or the MT41K256M16HA-125 from Micron, which is a cross-brand alternative. Both share the same 96-ball FBGA package and 4Gb DDR3L specifications.

Is K4B4G1646Q the same as K4B4G1646D?

No, the K4B4G1646Q and K4B4G1646D are not the same, but they are similar. Both are 4Gb DDR3L SDRAMs with the same package and organization, but they use different die revisions (Q-die vs D-die). They are pin-compatible and can be used interchangeably in most designs.

What is the best Micron equivalent for K4B4G1646Q?

The best Micron equivalent for K4B4G1646Q is the MT41K256M16HA-125, which is a 4Gb DDR3L SDRAM in a 96-ball FBGA package. It offers similar specifications and is a drop-in replacement, though it may have different timing parameters.

Engineering reference data for K4B4G1646Q — comparison, design guidance, and compliance information.

Selection Guide

Choose the K4B4G1646Q when you need a 4Gb DDR3L SDRAM with a 16-bit bus and low power consumption. It is ideal for new designs where the latest Q-die process is preferred. If you are looking for a drop-in replacement, the K4B4G1646E-BYK0 is a same-brand option with similar performance. For cross-brand alternatives, the MT41K256M16HA-125 from Micron is a reliable choice, but verify timing parameters. The K4B4G1646D-BCK00 is a cost-effective option if the older D-die is acceptable. Consider the specific speed grade and temperature requirements of your application when selecting.

Comparison with Alternatives

Parameter	This Product	K4B4G1646E-BYK0	K4B4G1646D-BCK00	MT41K256M16HA-125
Package	96-ball FBGA	96-ball FBGA	96-ball FBGA	96-ball FBGA
Brand	Samsung Electronics	Samsung Electronics	Samsung Electronics	Micron Technology
Density	4Gb	4Gb	4Gb	4Gb
Organization	256M x 16	256M x 16	256M x 16	256M x 16
Supply Voltage	1.35V	1.35V	1.35V	1.35V
Data Rate	1866 Mbps	1866 Mbps	1866 Mbps	1866 Mbps
Die	Q-die	E-die	D-die	[DATA_NEEDED]
RoHS Compliant	Yes	Yes	Yes	Yes

Key Differentiators

Q-die process technology (vs K4B4G1646D-BCK00)
Low voltage operation (vs MT41K256M16HA-125)
Same-brand availability (vs MT41K256M16HA-125)

Design Notes

The K4B4G1646Q operates at 1.35V, which is lower than standard DDR3's 1.5V. Ensure the power supply can provide a stable 1.35V rail with adequate decoupling. Use multiple 0.1uF ceramic capacitors near the VDD and VDDQ pins to filter high-frequency noise, and a bulk capacitor (e.g., 10uF) for transient currents.

For the 96-ball FBGA package, follow the layout guidelines in the datasheet. Maintain controlled impedance for the data and address lines, typically 50 ohms single-ended and 100 ohms differential. Keep the trace lengths matched to minimize skew, and place the device close to the controller to reduce signal degradation.

Ensure the memory controller is configured for DDR3L (1.35V) operation, not standard DDR3 (1.5V), to avoid damage. Also, verify the speed grade matches the system requirements. Incorrect termination settings can cause signal integrity issues, so use the on-die termination (ODT) features as specified in the datasheet.