K4B4G1646D-BHMA vs K4B4G1646E-BMK0 Comparison

Detailed side-by-side comparison of K4B4G1646D-BHMA by Samsung Electronics and K4B4G1646E-BMK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4B4G1646D-BHMA K4B4G1646D-BHMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung

K4B4G1646D-BHMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung

K4B4G1646D-BHMA ✓ Active
Samsung Electronics
K4B4G1646E-BMK0 K4B4G1646E-BMK0 - 4Gb DDR3L SDRAM 1600Mbps | Samsung

K4B4G1646E-BMK0 - 4Gb DDR3L SDRAM 1600Mbps | Samsung

K4B4G1646E-BMK0 ✓ Active

Specification Comparison

Parameter K4B4G1646D-BHMA K4B4G1646E-BMK0
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Memory Type DDR3L SDRAM DDR3L SDRAM
Density 4 Gb 4 Gb
Organization 256M x 16 256M x 16
Data Rate 1866 Mbps 1600 Mbps
Supply Voltage 1.35 V (1.283 V to 1.45 V) —
Package 96-ball FBGA 96-FBGA
Operating Temperature -40°C to +95°C (TC) -40°C to +95°C
CAS Latency 13 (at 1866 Mbps) —
Burst Length 8 and 4 —
Number of Terminals 96 —
Lead-Free Yes —
Halogen Free Yes —
RoHS Compliant Yes —
Die Version D-die —
Refresh Mode Auto and Self Refresh —
Speed Grade — 1600 Mbps
Voltage — 1.35 V
Interface — Parallel
Clock Frequency — 800 MHz
Mounting Type — Surface Mount
Auto Precharge — Yes
Asynchronous Reset — Yes
ZQ Calibration — Yes
Dynamic ODT — Yes
Data Mask — Yes

Datasheets & Resources

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