K4B4G1646D-BHMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
MPN: K4B4G1646D-BHMA β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.5 | $4.50 |
| 10 | $4.1 | $41.00 |
| 100 | $3.7 | $370.00 |
| 500 | $3.3 | $1,650.00 |
| 1,000 | $2.9 | $2,900.00 |
Drop-in alternatives for K4B4G1646D-BHMA β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet βK4B4G1646D-BHMA Maximum Ratings & Electrical Characteristics
| Memory Type | DDR3L SDRAM |
| Density | 4 Gb |
| Organization | 256M x 16 |
| Data Rate | 1866 Mbps |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) |
| Package | 96-ball FBGA |
| Operating Temperature | -40Β°C to +95Β°C (TC) |
| CAS Latency | 13 (at 1866 Mbps) |
| Burst Length | 8 and 4 |
| Number of Terminals | 96 |
| Lead-Free | Yes |
| Halogen-Free | Yes |
| RoHS Compliant | Yes |
| Die Version | D-die |
| Refresh Mode | Auto and Self Refresh |
K4B4G1646D-BHMA Pin Configuration
| Pin A1 | VDD β Power supply |
| Pin A2 | DQ0 β Data input/output 0 |
| Pin A3 | DQ1 β Data input/output 1 |
| Pin A4 | VSS β Ground |
| Pin A5 | DQ2 β Data input/output 2 |
| Pin A6 | DQ3 β Data input/output 3 |
| Pin A7 | VDD β Power supply |
| Pin A8 | DQ4 β Data input/output 4 |
| Pin A9 | DQ5 β Data input/output 5 |
| Pin A10 | VSS β Ground |
| Pin A11 | DQ6 β Data input/output 6 |
| Pin A12 | DQ7 β Data input/output 7 |
| Pin B1 | VSS β Ground |
| Pin B2 | DQ8 β Data input/output 8 |
| Pin B3 | DQ9 β Data input/output 9 |
| Pin B4 | VDD β Power supply |
| Pin B5 | DQ10 β Data input/output 10 |
| Pin B6 | DQ11 β Data input/output 11 |
| Pin B7 | VSS β Ground |
| Pin B8 | DQ12 β Data input/output 12 |
| Pin B9 | DQ13 β Data input/output 13 |
| Pin B10 | VDD β Power supply |
| Pin B11 | DQ14 β Data input/output 14 |
| Pin B12 | DQ15 β Data input/output 15 |
| Pin C1 | VDDQ β DQ power supply |
| Pin C2 | VSSQ β DQ ground |
| Pin C3 | VDDQ β DQ power supply |
| Pin C4 | VSSQ β DQ ground |
| Pin C5 | VDDQ β DQ power supply |
| Pin C6 | VSSQ β DQ ground |
| Pin C7 | VDDQ β DQ power supply |
| Pin C8 | VSSQ β DQ ground |
| Pin C9 | VDDQ β DQ power supply |
| Pin C10 | VSSQ β DQ ground |
| Pin C11 | VDDQ β DQ power supply |
| Pin C12 | VSSQ β DQ ground |
| Pin D1 | A0 β Address input 0 |
| Pin D2 | A1 β Address input 1 |
| Pin D3 | A2 β Address input 2 |
| Pin D4 | A3 β Address input 3 |
| Pin D5 | A4 β Address input 4 |
| Pin D6 | A5 β Address input 5 |
| Pin D7 | A6 β Address input 6 |
| Pin D8 | A7 β Address input 7 |
| Pin D9 | A8 β Address input 8 |
| Pin D10 | A9 β Address input 9 |
| Pin D11 | A10/AP β Address input 10 / Auto-precharge |
| Pin D12 | A11 β Address input 11 |
| Pin E1 | A12 β Address input 12 |
| Pin E2 | A13 β Address input 13 |
| Pin E3 | A14 β Address input 14 |
| Pin E4 | BA0 β Bank address 0 |
| Pin E5 | BA1 β Bank address 1 |
| Pin E6 | BA2 β Bank address 2 |
| Pin E7 | RAS# β Row address strobe |
| Pin E8 | CAS# β Column address strobe |
| Pin E9 | WE# β Write enable |
| Pin E10 | CS# β Chip select |
| Pin E11 | CKE β Clock enable |
| Pin E12 | ODT β On-die termination |
| Pin F1 | CK β Clock positive |
| Pin F2 | CK# β Clock negative |
| Pin F3 | VDD β Power supply |
| Pin F4 | VSS β Ground |
| Pin F5 | VDD β Power supply |
| Pin F6 | VSS β Ground |
| Pin F7 | VDD β Power supply |
| Pin F8 | VSS β Ground |
| Pin F9 | VDD β Power supply |
| Pin F10 | VSS β Ground |
| Pin F11 | VDD β Power supply |
| Pin F12 | VSS β Ground |
| Pin G1 | DM0 β Data mask 0 |
| Pin G2 | DM1 β Data mask 1 |
| Pin G3 | DQS0 β Data strobe 0 |
| Pin G4 | DQS0# β Data strobe 0 complement |
| Pin G5 | DQS1 β Data strobe 1 |
| Pin G6 | DQS1# β Data strobe 1 complement |
| Pin G7 | DQS2 β Data strobe 2 |
| Pin G8 | DQS2# β Data strobe 2 complement |
| Pin G9 | DQS3 β Data strobe 3 |
| Pin G10 | DQS3# β Data strobe 3 complement |
| Pin G11 | VDD β Power supply |
| Pin G12 | VSS β Ground |
| Pin H1 | VSS β Ground |
| Pin H2 | VDD β Power supply |
| Pin H3 | VSS β Ground |
| Pin H4 | VDD β Power supply |
| Pin H5 | VSS β Ground |
| Pin H6 | VDD β Power supply |
| Pin H7 | VSS β Ground |
| Pin H8 | VDD β Power supply |
| Pin H9 | VSS β Ground |
| Pin H10 | VDD β Power supply |
| Pin H11 | VSS β Ground |
| Pin H12 | VDD β Power supply |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4B4G1646D-BHMA is suitable for 6 applications: Embedded Systems, Networking Equipment, Mobile Devices, Industrial Machinery, Medical Devices, Automotive Electronics.
Embedded Systems
The K4B4G1646D-BHMA is ideal for embedded systems requiring high-density, low-power memory. Its 4Gb density and 1.35V operation reduce power consumption, making it suitable for industrial controllers, IoT gateways, and single-board computers. The 1866 Mbps data rate ensures fast data processing, while the 96FBGA package fits compact PCB designs. According to Samsung, it is designed for high-density memory applications in embedded systems.
Recommended
Networking Equipment
In networking equipment such as routers, switches, and firewalls, the K4B4G1646D-BHMA provides high-bandwidth memory for packet buffering and routing tables. Its 1866 Mbps data rate supports high-throughput data processing, and the 1.35V operation reduces power in always-on network devices. The 96FBGA package allows for dense memory arrays on network line cards. According to Samsung, it is suitable for networking equipment.
Recommended
Mobile Devices
The K4B4G1646D-BHMA is well-suited for mobile devices like smartphones and tablets due to its low 1.35V operation, which extends battery life. The 4Gb density provides ample memory for multitasking and multimedia applications. The 1866 Mbps data rate ensures smooth performance for apps and games. Its compact 96FBGA package is ideal for space-constrained mobile PCBs. According to Samsung, it is used in mobile phones and tablets.
Recommended
Industrial Machinery
The K4B4G1646D-BHMA operates over -40Β°C to +95Β°C, making it suitable for industrial machinery that experiences extreme temperatures. Its high density and 1866 Mbps data rate support real-time control and data logging. The 1.35V operation reduces power in industrial systems. The 96FBGA package provides reliable solder joints for harsh environments. According to Samsung, it is used in industrial machinery.
Recommended
Medical Devices
In medical devices such as patient monitors and diagnostic equipment, the K4B4G1646D-BHMA provides reliable, high-density memory for data acquisition and processing. Its low 1.35V operation is critical for battery-powered portable medical devices. The 1866 Mbps data rate supports real-time signal processing. The 96FBGA package is compact for medical device PCBs. According to Samsung, it is used in medical devices.
Recommended
Automotive Electronics
The K4B4G1646D-BHMA is suitable for automotive electronics such as infotainment systems and ADAS, where high-density memory and low power are essential. Its wide temperature range (-40Β°C to +95Β°C) meets automotive requirements. The 1866 Mbps data rate supports high-bandwidth applications like navigation and camera processing. The 96FBGA package is robust for automotive environments. According to Samsung, it is used in automotive electronics.
Recommended
Recommended Products Summary
Engineering reference data for K4B4G1646D-BHMA β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4B4G1646E-BMK0 | K4B4G1646D-BMK0 | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Operating Temperature | -40Β°C to +95Β°C | -40Β°C to +95Β°C | -40Β°C to +95Β°C | -40Β°C to +95Β°C |
| Die Version | D-die | E-die | D-die | [DATA_NEEDED] |
Key Differentiators
- D-die process for improved performance (vs K4B4G1646E-BMK0)
- Low voltage operation at 1.35V (vs MT41K256M16HA-125)
- Wide temperature range (vs IS43TR16256AL-125KBL)
Design Notes
For reliable operation at 1866 Mbps, follow the PCB layout guidelines in the Samsung datasheet. Ensure proper impedance matching for DQ, DQS, and address/control lines. Use 40-60 ohm single-ended and 80-120 ohm differential impedance. Keep trace lengths matched within 50 mils for DQ/DQS groups. Place decoupling capacitors (0.1uF and 1uF) close to VDD and VDDQ pins to minimize power supply noise.
The K4B4G1646D-BHMA operates at 1.35V, which is lower than standard DDR3 (1.5V). Ensure the power supply can provide adequate current during burst operations. Use a dedicated voltage regulator with low output noise and fast transient response. According to the datasheet, the supply voltage range is 1.283V to 1.45V. Monitor the power supply for droop during high-speed switching.
The K4B4G1646D-BHMA operates over -40Β°C to +95Β°C. For high-density memory arrays, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The 96FBGA package has a thermal resistance that depends on PCB copper area. Use thermal vias under the package to improve heat dissipation. According to Samsung, the device is suitable for industrial temperature ranges.
Compliance Information
Lead-free and halogen-free per datasheet. RoHS compliant. AEC-Q100 not applicable for memory ICs.
