K4B4G1646D-BMK0 vs K4B4G1646Q Comparison
Detailed side-by-side comparison of K4B4G1646D-BMK0 by Samsung Electronics and K4B4G1646Q by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung
K4B4G1646D-BMK0 ✓ Active
Specification Comparison
| Parameter | K4B4G1646D-BMK0 | K4B4G1646Q |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.90 | $6.50 |
| Density | 4 Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 |
| Speed Grade | 1600 Mbps (PC3L-12800) | — |
| Voltage | 1.35 V | — |
| Operating Temperature | -40°C to 95°C | [DATA_NEEDED: Operating temperature range] |
| Package | 96FBGA (TFBGA) | 96-ball FBGA |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Die Version | D-die | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | Yes |
| RoHS Compliant | Yes | Yes |
| Number of Terminals | 96 | — |
| Package Code | TFBGA | — |
| Number of Functions | 1 | — |
| Data Rate | 1600 Mbps | 1866 Mbps (PC3-14900) |
| Data Bus Width | — | 16 bits |
| Supply Voltage | — | 1.35V |
| Die | — | Q-die |
| Burst Length | — | 8 (BL8) |
| On-Die Termination | — | Yes (ODT) |
| CAS Latency | — | Programmable |