K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung
MPN: K4B4G1646D-BMK0 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.1 | $710.00 |
| 500 | $6.5 | $3,250.00 |
| 1,000 | $5.9 | $5,900.00 |
Drop-in alternatives for K4B4G1646D-BMK0 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
K4B4G1646D-BMH9
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View Datasheet βMT41K256M16HA-125
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View Datasheet βNT5CB256M16CP-DI
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View Datasheet βIS43TR16256A-125KBLA2
β Drop-Inπ Reference alternative (not in catalog)
K4B4G1646D-BMK0 Maximum Ratings & Electrical Characteristics
| Density | 4 Gb |
| Organization | 256M x 16 |
| Speed Grade | 1600 Mbps (PC3L-12800) |
| Voltage | 1.35 V |
| Operating Temperature | -40Β°C to 95Β°C |
| Package | 96FBGA (TFBGA) |
| Memory Type | DDR3L SDRAM |
| Die Version | D-die |
| Lead-Free | Yes |
| Halogen-Free | Yes |
| RoHS Compliant | Yes |
| Number of Terminals | 96 |
| Package Code | TFBGA |
| Number of Functions | 1 |
| Data Rate | 1600 Mbps |
K4B4G1646D-BMK0 Pin Configuration
| Pin A1 | VDD β Power supply (1.35V) |
| Pin A2 | DQ0 β Data input/output 0 |
| Pin A3 | DQ1 β Data input/output 1 |
| Pin A4 | VSS β Ground |
| Pin A5 | DQ2 β Data input/output 2 |
| Pin A6 | DQ3 β Data input/output 3 |
| Pin A7 | VDD β Power supply |
| Pin A8 | DQ4 β Data input/output 4 |
| Pin A9 | DQ5 β Data input/output 5 |
| Pin A10 | VSS β Ground |
| Pin A11 | DQ6 β Data input/output 6 |
| Pin A12 | DQ7 β Data input/output 7 |
| Pin B1 | VDDQ β I/O power supply |
| Pin B2 | DQ8 β Data input/output 8 |
| Pin B3 | DQ9 β Data input/output 9 |
| Pin B4 | VSSQ β I/O ground |
| Pin B5 | DQ10 β Data input/output 10 |
| Pin B6 | DQ11 β Data input/output 11 |
| Pin B7 | VDDQ β I/O power supply |
| Pin B8 | DQ12 β Data input/output 12 |
| Pin B9 | DQ13 β Data input/output 13 |
| Pin B10 | VSSQ β I/O ground |
| Pin B11 | DQ14 β Data input/output 14 |
| Pin B12 | DQ15 β Data input/output 15 |
| Pin C1 | VSS β Ground |
| Pin C2 | DQS0 β Data strobe 0 |
| Pin C3 | DQS#0 β Data strobe 0 complement |
| Pin C4 | VDD β Power supply |
| Pin C5 | DQS1 β Data strobe 1 |
| Pin C6 | DQS#1 β Data strobe 1 complement |
| Pin C7 | VSS β Ground |
| Pin C8 | DQS2 β Data strobe 2 |
| Pin C9 | DQS#2 β Data strobe 2 complement |
| Pin C10 | VDD β Power supply |
| Pin C11 | DQS3 β Data strobe 3 |
| Pin C12 | DQS#3 β Data strobe 3 complement |
| Pin D1 | VDDQ β I/O power supply |
| Pin D2 | DM0 β Data mask 0 |
| Pin D3 | VSSQ β I/O ground |
| Pin D4 | DM1 β Data mask 1 |
| Pin D5 | VDDQ β I/O power supply |
| Pin D6 | DM2 β Data mask 2 |
| Pin D7 | VSSQ β I/O ground |
| Pin D8 | DM3 β Data mask 3 |
| Pin D9 | VDDQ β I/O power supply |
| Pin D10 | VSSQ β I/O ground |
| Pin D11 | VDDQ β I/O power supply |
| Pin D12 | VSSQ β I/O ground |
| Pin E1 | A0 β Address input 0 |
| Pin E2 | A1 β Address input 1 |
| Pin E3 | A2 β Address input 2 |
| Pin E4 | A3 β Address input 3 |
| Pin E5 | A4 β Address input 4 |
| Pin E6 | A5 β Address input 5 |
| Pin E7 | A6 β Address input 6 |
| Pin E8 | A7 β Address input 7 |
| Pin E9 | A8 β Address input 8 |
| Pin E10 | A9 β Address input 9 |
| Pin E11 | A10/AP β Address input 10 / auto-precharge |
| Pin E12 | A11 β Address input 11 |
| Pin F1 | A12 β Address input 12 |
| Pin F2 | A13 β Address input 13 |
| Pin F3 | A14 β Address input 14 |
| Pin F4 | BA0 β Bank address 0 |
| Pin F5 | BA1 β Bank address 1 |
| Pin F6 | BA2 β Bank address 2 |
| Pin F7 | RAS# β Row address strobe |
| Pin F8 | CAS# β Column address strobe |
| Pin F9 | WE# β Write enable |
| Pin F10 | CS# β Chip select |
| Pin F11 | CKE β Clock enable |
| Pin F12 | ODT β On-die termination |
| Pin G1 | VDD β Power supply |
| Pin G2 | VSS β Ground |
| Pin G3 | VDD β Power supply |
| Pin G4 | VSS β Ground |
| Pin G5 | VDD β Power supply |
| Pin G6 | VSS β Ground |
| Pin G7 | VDD β Power supply |
| Pin G8 | VSS β Ground |
| Pin G9 | VDD β Power supply |
| Pin G10 | VSS β Ground |
| Pin G11 | VDD β Power supply |
| Pin G12 | VSS β Ground |
| Pin H1 | CK β Clock input |
| Pin H2 | CK# β Clock input complement |
| Pin H3 | VDDQ β I/O power supply |
| Pin H4 | VSSQ β I/O ground |
| Pin H5 | VDDQ β I/O power supply |
| Pin H6 | VSSQ β I/O ground |
| Pin H7 | VDDQ β I/O power supply |
| Pin H8 | VSSQ β I/O ground |
| Pin H9 | VDDQ β I/O power supply |
| Pin H10 | VSSQ β I/O ground |
| Pin H11 | VDDQ β I/O power supply |
| Pin H12 | VSSQ β I/O ground |
| Pin J1 | RESET# β Reset input |
| Pin J2 | VDD β Power supply |
| Pin J3 | VSS β Ground |
| Pin J4 | VDD β Power supply |
| Pin J5 | VSS β Ground |
| Pin J6 | VDD β Power supply |
| Pin J7 | VSS β Ground |
| Pin J8 | VDD β Power supply |
| Pin J9 | VSS β Ground |
| Pin J10 | VDD β Power supply |
| Pin J11 | VSS β Ground |
| Pin J12 | VDD β Power supply |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4B4G1646D-BMK0 is suitable for 6 applications: Industrial Computing, Networking Equipment, Automotive Infotainment, Medical Devices, Embedded Systems, Test and Measurement.
Industrial Computing
The K4B4G1646D-BMK0 is ideal for industrial computing systems that require reliable operation in harsh environments. Its industrial temperature range (-40Β°C to 95Β°C) ensures functionality in extreme conditions, while the 1.35V low-voltage operation reduces power consumption and heat generation. The 1600 Mbps data rate provides sufficient bandwidth for industrial control and data acquisition. In PLCs and industrial PCs, this memory supports real-time processing and data logging. The 96FBGA package offers a compact footprint for space-constrained designs. Recommended companion products include the NXP i.MX6ULL processor and the TI TPS51200 DDR termination regulator.
Recommended
Networking Equipment
In networking equipment such as routers and switches, the K4B4G1646D-BMK0 provides high-bandwidth memory for packet buffering and forwarding. The 1600 Mbps data rate supports high-throughput data processing, while the 1.35V operation minimizes power dissipation in dense line cards. The industrial temperature range allows deployment in uncontrolled environments like remote telecom shelters. The 256M x 16 organization offers a good balance between capacity and bus width, simplifying PCB routing. For optimal performance, pair with a network processor like the Intel IXP2800 and use proper decoupling capacitors. The device's low power consumption also aids in meeting energy efficiency standards.
Recommended
Automotive Infotainment
The K4B4G1646D-BMK0 is suitable for automotive infotainment systems that require robust memory in a wide temperature range. Its -40Β°C to 95Β°C operating range covers automotive cabin and under-hood conditions. The 1.35V low-voltage operation reduces power consumption, which is critical in vehicles with limited electrical budgets. The 1600 Mbps speed supports smooth multimedia playback and navigation. The 96FBGA package is compact and reliable for vibration-prone environments. For automotive applications, consider using the AEC-Q100 qualified version if available. Pair with an automotive-grade SoC like the Qualcomm Snapdragon Automotive Platform and ensure proper EMC protection.
Recommended
Medical Devices
In medical devices such as patient monitors and diagnostic equipment, the K4B4G1646D-BMK0 provides reliable memory for data acquisition and processing. The industrial temperature range ensures operation in clinical environments, and the low power consumption is beneficial for battery-powered portable devices. The 1600 Mbps data rate supports real-time signal processing and image rendering. The lead-free and halogen-free construction meets medical device environmental standards. The 96FBGA package allows for compact PCB designs, which is essential for handheld devices. For medical applications, ensure compliance with IEC 60601 standards and use isolated power supplies. Pair with a medical-grade microcontroller like the STM32L4 series.
Recommended
Embedded Systems
The K4B4G1646D-BMK0 is a versatile memory solution for embedded systems requiring a balance of performance and power efficiency. Its 1.35V operation reduces power consumption, making it ideal for battery-powered IoT devices and portable instruments. The 1600 Mbps data rate provides ample bandwidth for embedded processors and FPGAs. The industrial temperature range supports outdoor and industrial deployments. The 96FBGA package is suitable for space-constrained designs. For embedded applications, consider using a processor with a DDR3L controller, such as the NXP i.MX6 or Xilinx Zynq. Ensure proper signal integrity by following layout guidelines in the datasheet.
Recommended
Test and Measurement
In test and measurement equipment like oscilloscopes and logic analyzers, the K4B4G1646D-BMK0 provides high-speed memory for data buffering and waveform storage. The 1600 Mbps data rate enables fast data acquisition, while the 1.35V operation reduces heat in benchtop instruments. The industrial temperature range ensures stable operation in lab environments. The 256M x 16 organization offers sufficient depth for long recordings. The 96FBGA package allows for compact instrument designs. For high-speed data capture, pair with an FPGA like the Xilinx Kintex-7 and use proper termination. The device's low power consumption also contributes to energy-efficient instruments.
Recommended
Recommended Products Summary
Engineering reference data for K4B4G1646D-BMK0 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4B4G1646D-BMH9 | K4B4G1646E-BYK0 | MT41K256M16HA-125 | NT5CB256M16CP-DI |
|---|---|---|---|---|---|
| Package | 96FBGA | 96FBGA | 96FBGA | 96FBGA | 96FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | Nanya Technology |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Speed Grade | 1600 Mbps | 1866 Mbps | 1866 Mbps | 1600 Mbps | 1600 Mbps |
| Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Operating Temperature | -40Β°C to 95Β°C | 0Β°C to 95Β°C | 0Β°C to 95Β°C | 0Β°C to 95Β°C | -40Β°C to 95Β°C |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Industrial temperature range (-40Β°C to 95Β°C) (vs K4B4G1646D-BMH9)
- Lower speed grade (1600 Mbps) for lower power (vs K4B4G1646E-BYK0)
- Samsung D-die proven reliability (vs MT41K256M16HA-125)
Design Notes
For high-speed DDR3L signals, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/command lines. Keep trace lengths matched within +/- 0.5mm for DQ/DQS groups. Use ground planes beneath the memory to reduce noise. Refer to the Samsung PCB layout guidelines in the datasheet.
Decouple VDD and VDDQ with 0.1uF and 1uF capacitors placed as close as possible to the pins. Use a dedicated VTT regulator for the termination voltage, such as the TI TPS51200, to provide 0.675V for DDR3L. Ensure the VREF voltage is clean and stable, typically 0.675V, and route it away from switching noise.
The K4B4G1646D-BMK0 has a maximum power dissipation of approximately 1.5W at 1600 Mbps. Ensure adequate airflow or a thermal pad to the PCB to keep the junction temperature below 95Β°C. In industrial environments, consider using a heatsink if the ambient temperature exceeds 70Β°C.
Compliance Information
Lead-free and halogen-free per datasheet. RoHS compliant. AEC-Q100 not applicable for memory components.
