K4B4G1646D-BPH90 vs K4B4G1646D-BYH90 Comparison
Detailed side-by-side comparison of K4B4G1646D-BPH90 by Samsung Electronics and K4B4G1646D-BYH90 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BPH90
K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BPH90 β ActiveSamsung Electronics
K4B4G1646D-BYH90
K4B4G1646D-BYH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BYH90 β ActiveSpecification Comparison
| Parameter | K4B4G1646D-BPH90 | K4B4G1646D-BYH90 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.60 | $8.80 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organization | 32M x 16 | 512M x 16 |
| Number of Banks | 8 | 8 |
| Data Rate | 2133 Mb/s per pin | 2133 Mbps/pin |
| Supply Voltage | 1.35V (DDR3L) | 1.35V (1.283V to 1.45V) |
| Package | 96FBGA | 96-ball FBGA (TFBGA) |
| Operating Temperature | 0Β°C to +85Β°C | 0Β°C to +85Β°C |
| CAS Latency | Programmable up to 14 | Programmable (e.g., 11, 12, 13) |
| Burst Length | 8, 4 (with burst chop) | 8 and 4 (with burst chop) |
| On-Die Termination | Yes | Yes (ODT pin) |
| ZQ Calibration | Yes | Yes (240-ohm resistor to ground) |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Data Mask | Yes | β |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes | Yes |
| RoHS Compliant | Yes | β |
| I/O Interface | β | x16 |
| Ball Pitch | β | 0.8 mm |
| RoHS | β | Compliant |