K4B4G1646D-BPH90 vs K4B4G1646D-BYH90 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646D-BPH90 disebabkan oleh Samsung Electronics dan K4B4G1646D-BYH90 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BPH90 ✓ AktifSamsung Electronics
K4B4G1646D-BYH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BYH90 ✓ AktifPengandingan Spesifikasi
| Parametr | K4B4G1646D-BPH90 | K4B4G1646D-BYH90 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organisasi | 32M x 16 | 512M x 16 |
| Number of Banks | 8 | 8 |
| Kadar Data | 2133 Mb/s per pin | 2133 Mbps/pin |
| Tegangan Pemberi Arus | 1.35V (DDR3L) | 1.35V (1.283V to 1.45V) |
| Kemasan | 96FBGA | 96-ball FBGA (TFBGA) |
| Suhu Operasi | 0°C to +85°C | 0°C to +85°C |
| Latensi CAS | Programmable up to 14 | Programmable (e.g., 11, 12, 13) |
| Burst Length | 8, 4 (with burst chop) | 8 and 4 (with burst chop) |
| On-Die Termination | Yes | Yes (ODT pin) |
| ZQ Calibration | Yes | Yes (240-ohm resistor to ground) |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Lead-Free | Yes | Yes |
| Boson Bebas | Yes | Yes |
| RoHS Compliant | Yes | — |
| I/O Interface | — | x16 |
| Ball Pitch | — | 0.8 mm |
| RoHS | — | Compliant |