K4B4G1646D-BYH90 vs K4B4G1646D-BHMA Comparison
Detailed side-by-side comparison of K4B4G1646D-BYH90 by Samsung Electronics and K4B4G1646D-BHMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BYH90 ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646D-BYH90 | K4B4G1646D-BHMA |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organization | 512M x 16 | 256M x 16 |
| Data Rate | 2133 Mbps/pin | 1866 Mbps |
| Supply Voltage | 1.35V (1.283V to 1.45V) | 1.35 V (1.283 V to 1.45 V) |
| I/O Interface | x16 | — |
| Number of Banks | 8 | — |
| Package | 96-ball FBGA (TFBGA) | 96-ball FBGA |
| Ball Pitch | 0.8 mm | — |
| Operating Temperature | 0°C to +85°C | -40°C to +95°C (TC) |
| CAS Latency | Programmable (e.g., 11, 12, 13) | 13 (at 1866 Mbps) |
| Burst Length | 8 and 4 (with burst chop) | 8 and 4 |
| On-Die Termination | Yes (ODT pin) | — |
| ZQ Calibration | Yes (240-ohm resistor to ground) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | Yes |
| Number of Terminals | — | 96 |
| RoHS Compliant | — | Yes |
| Die Version | — | D-die |
| Refresh Mode | — | Auto and Self Refresh |