K4B4G1646D-BYK00 vs H5AN8G6NCJR-XXC Comparison
Detailed side-by-side comparison of K4B4G1646D-BYK00 by Samsung Electronics and H5AN8G6NCJR-xxC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646D-BYK00 | H5AN8G6NCJR-xxC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.50 | $6.50 |
| Memory Type | DDR3L SDRAM | DDR4 SDRAM |
| Density | 4 Gb | 8 Gb |
| Organization | 256M x 16 | 512M x 16 |
| Data Rate | 1600 Mbps | 2666 Mbps (VKC speed grade) |
| Supply Voltage | 1.35 V (also operates at 1.5 V) | — |
| Package | 96-ball TFBGA | 96-ball FBGA |
| Number of Terminals | 96 | — |
| Operating Temperature | 0°C to 85°C | — |
| CAS Latency | Programmable | — |
| Additional Features | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | — |
| Package Shape | RECTANGULAR | — |
| Temperature Grade | OTHER | — |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Supply | — | 2.5 V |
| Operating Temperature (TC) | — | 0°C to 95°C |
| Number of Banks | — | 8 |
| Burst Length | — | 8, 4 (with burst chop) |
| On-Die Termination (ODT) | — | Supported |
| Self-Refresh | — | Temperature-compensated (TCSR) |
| Mounting Type | — | Surface Mount |