K4B4G1646D-BYK00 vs K4B4G1646D-BYK0 Comparison
Detailed side-by-side comparison of K4B4G1646D-BYK00 by Samsung Electronics and K4B4G1646D-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYK00
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 β ActiveSamsung Electronics
K4B4G1646D-BYK0
K4B4G1646D-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646D-BYK0 β ActiveSpecification Comparison
| Parameter | K4B4G1646D-BYK00 | K4B4G1646D-BYK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.50 | $2.90 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 |
| Data Rate | 1600 Mbps | 1600 Mbps (PC3-12800) |
| Supply Voltage | 1.35 V (also operates at 1.5 V) | 1.35 V (1.5 V compatible) |
| Package | 96-ball TFBGA | 96-ball FBGA |
| Number of Terminals | 96 | β |
| Operating Temperature | 0Β°C to 85Β°C | 0Β°C to 85Β°C |
| CAS Latency | Programmable | Programmable (e.g., 11, 10, 9) |
| Additional Features | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination | β |
| RoHS | Compliant | β |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes | Yes |
| Package Shape | RECTANGULAR | β |
| Temperature Grade | OTHER | β |
| Burst Length | β | 8 (with burst chop 4) |
| On-Die Termination | β | Yes |
| RoHS Compliant | β | Yes |
| Number of Pins | β | 96 |
| Die Revision | β | D-die |