K4B4G1646E-BMK0 vs K4B4G1646D-BHMA Comparison
Detailed side-by-side comparison of K4B4G1646E-BMK0 by Samsung Electronics and K4B4G1646D-BHMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4B4G1646E-BMK0 | K4B4G1646D-BHMA |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $2.90 |
| Density | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Speed Grade | 1600 Mbps | — |
| Voltage | 1.35 V | — |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C (TC) |
| Package | 96-FBGA | 96-ball FBGA |
| Interface | Parallel | — |
| Clock Frequency | 800 MHz | — |
| Data Rate | 1600 Mbps | 1866 Mbps |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Mounting Type | Surface Mount | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| Supply Voltage | — | 1.35 V (1.283 V to 1.45 V) |
| CAS Latency | — | 13 (at 1866 Mbps) |
| Burst Length | — | 8 and 4 |
| Number of Terminals | — | 96 |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| RoHS Compliant | — | Yes |
| Die Version | — | D-die |
| Refresh Mode | — | Auto and Self Refresh |