K4B4G1646E-BYK0 vs H5TC4G63MFR-PBA Comparison
Detailed side-by-side comparison of K4B4G1646E-BYK0 by Samsung Electronics and H5TC4G63MFR-PBA by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4B4G1646E-BYK0 | H5TC4G63MFR-PBA |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.80 | $6.50 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) | — |
| Data Rate | DDR3-1600 (800 MHz) | 1866 Mbps (PC3L-14900) |
| Package | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball FBGA |
| Operating Temperature | 0°C to +95°C (TC) | — |
| CAS Latency | 11 (CL-tRCD-tRP) | — |
| Burst Length | 8 (fixed), 4 (burst chop) | BL8, BL4 (with burst chop) |
| On-Die Termination | Yes (dynamic ODT) | — |
| ZQ Calibration | Yes | Yes |
| Auto Precharge | Yes | — |
| Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| RoHS | Compliant | — |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (+0.100V/-0.067V) |
| Number of Banks | — | 8 |
| CAS Latency (CL) | — | Programmable |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| On-Die Termination (ODT) | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Temperature-Compensated Self-Refresh | — | Yes |
| Process Technology | — | 30nm-class |
| RoHS Compliant | — | Yes (Lead-Free & Halogen-Free) |