K4B4G1646E-BYK000 vs K4B4G1646E-BYK0 Comparison

Detailed side-by-side comparison of K4B4G1646E-BYK000 by Samsung Electronics and K4B4G1646E-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4B4G1646E-BYK000 K4B4G1646E-BYK000 - 4Gb DDR3L SDRAM 256Mx16 | Samsung

K4B4G1646E-BYK000 - 4Gb DDR3L SDRAM 256Mx16 | Samsung

K4B4G1646E-BYK000 ✓ Active
Samsung Electronics
K4B4G1646E-BYK0 K4B4G1646E-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung

K4B4G1646E-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung

K4B4G1646E-BYK0 ✓ Active

Specification Comparison

Parameter K4B4G1646E-BYK000 K4B4G1646E-BYK0
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.56 $1.80
Memory Type DDR3L SDRAM DDR3L SDRAM
Memory Size 4 Gbit —
Organization 256M x 16 256M x 16
Speed Grade DDR3-1600 (1.25 ns clock cycle) —
Clock Frequency 800 MHz —
CAS Latency (CL) [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] —
Supply Voltage (VDD) 1.35 V (DDR3L), 1.5 V compatible (DDR3) —
Number of Banks [DATA_NEEDED: bank count] —
Die Process Samsung E-die —
Package 96-FBGA (BYK) 96-ball FBGA (13 x 9 mm, 0.8 mm pitch)
Mounting Type Surface Mount —
Interface Parallel —
Operating Temperature [DATA_NEEDED: operating temperature range] 0°C to +95°C (TC)
Features Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask —
RoHS Status [DATA_NEEDED: RoHS status] —
Access Time 1.25 ns —
Density — 4 Gb
Supply Voltage — 1.35 V (1.283 V to 1.45 V)
Data Rate — DDR3-1600 (800 MHz)
CAS Latency — 11 (CL-tRCD-tRP)
Burst Length — 8 (fixed), 4 (burst chop)
On-Die Termination — Yes (dynamic ODT)
ZQ Calibration — Yes
Auto Precharge — Yes
Self-Refresh — Yes
Asynchronous Reset — Yes
Data Mask — Yes
RoHS — Compliant

Datasheets & Resources

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