K4B4G1646E-BYK000 vs K4B4G1646E-BYK0 对比
详细并排对比 K4B4G1646E-BYK000 出自 Samsung Electronics 和 K4B4G1646E-BYK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4B4G1646E-BYK000 | K4B4G1646E-BYK0 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.56 | $1.80 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| 存储容量 | 4 Gbit | — |
| 存储组织 | 256M x 16 | 256M x 16 |
| Speed Grade | DDR3-1600 (1.25 ns clock cycle) | — |
| Clock Frequency | 800 MHz | — |
| CAS Latency (CL) | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] | — |
| Supply Voltage (VDD) | 1.35 V (DDR3L), 1.5 V compatible (DDR3) | — |
| Number of Banks | [DATA_NEEDED: bank count] | — |
| Die Process | Samsung E-die | — |
| 封装 | 96-FBGA (BYK) | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| 安装类型 | Surface Mount | — |
| 接口 | Parallel | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | 0°C to +95°C (TC) |
| 特性 | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | — |
| Access Time | 1.25 ns | — |
| Density | — | 4 Gb |
| 电源电压 | — | 1.35 V (1.283 V to 1.45 V) |
| 数据速率 | — | DDR3-1600 (800 MHz) |
| CAS 延迟 | — | 11 (CL-tRCD-tRP) |
| Burst Length | — | 8 (fixed), 4 (burst chop) |
| On-Die Termination | — | Yes (dynamic ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| RoHS | — | Compliant |