K4B4G1646E-BYMA vs H5TC4G63CFR-H9I Comparison
Detailed side-by-side comparison of K4B4G1646E-BYMA by Samsung Electronics and H5TC4G63CFR-H9I by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4B4G1646E-BYMA | H5TC4G63CFR-H9I |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $14.32 | $7.20 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (1.28 V to 1.575 V) | 1.35 V |
| Clock Frequency | 933 MHz | — |
| Data Rate | 1866 Mbps/pin | 1866 Mbps (PC3-14900) |
| Operating Temperature | 0°C to +95°C | — |
| Operating Current | 14 mA | — |
| Standby Current | 2 mA, 3 mA | — |
| Package | FBGA-96 | 96-ball TFBGA |
| Mounting Type | Surface Mount | — |
| RoHS | Compliant | — |
| CAS Latency | [DATA_NEEDED: CAS Latency] | Programmable (11, 12, 13) |
| Burst Length | [DATA_NEEDED: Burst Length] | 8 and 4 |
| Number of Pins | 96 | — |
| I/O Voltage | — | 1.35 V |
| Temperature Grade | — | Industrial (-40°C to +95°C) |
| Number of Terminals | — | 96 |
| Memory Width | — | 16 bits |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| RoHS Compliant | — | Yes |
| On-Die Termination | — | Yes |
| Refresh Modes | — | Auto-refresh, Self-refresh |