K4RAH086VE-BCWM vs PDRQL8KCBF12-00 Comparison
Detailed side-by-side comparison of K4RAH086VE-BCWM by Samsung Electronics and PDRQL8KCBF12-00 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ Active
Specification Comparison
| Parameter | K4RAH086VE-BCWM | PDRQL8KCBF12-00 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.60 | $18.00 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb |
| Organization | 2G x 8 | 2G x 8 |
| Data Rate | 5600 Mbps | 7200 MT/s |
| Supply Voltage (VDD) | 1.1 V | — |
| Package | 82-ball FBGA | FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +85C | [DATA_NEEDED: Operating temperature range] |
| Generation | DDR5 | — |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| CAS Latency | [DATA_NEEDED: CL at 5600 Mbps] | — |
| VDDQ Voltage | [DATA_NEEDED: VDDQ value] | — |
| Refresh | [DATA_NEEDED: refresh rate] | Auto-refresh and self-refresh |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Lifecycle Status | Mass Production | — |
| Manufacturer | Samsung Electronics | — |
| Supply Voltage | — | 1.1 V |
| Burst Length | — | 16 (BL16), burst chop 8 (BC8) |
| On-die ECC | — | Yes |
| Interface | — | Pseudo-differential DQ |
| Process Technology | — | 10nm-class |
| Lead-Free | — | Yes |