K4RAH086VP-BCWM vs K4RHE086VB-BCWM Comparison
Detailed side-by-side comparison of K4RAH086VP-BCWM by Samsung Electronics and K4RHE086VB-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4RAH086VP-BCWM | K4RHE086VB-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $7.65 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Memory Size | 16 Gb | — |
| Memory Organization | 2G x 8 | — |
| Data Rate | 5600 Mbps/pin | 5600 Mbps |
| Supply Voltage | 1.1 V | 1.1 V |
| Interface | Parallel | DDR5 (JEDEC) |
| Technology | DRAM DDR5 | — |
| Memory Format | DRAM | — |
| Volatile / Non-Volatile | Volatile | — |
| Package | [DATA_NEEDED: exact FBGA package code and body size] | 82 FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| Application Segment | Industrial | Server / Data Center / Premium PC |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Lifecycle Status | Active | — |
| RoHS Status | unknown | unknown |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 24 Gb |
| Organization | — | 2G x 8 |
| Configuration | — | x8 |
| Manufacturer | — | Samsung Semiconductor |
| Access Time / CAS Latency | — | [DATA_NEEDED: CAS latency] |
| On-Die ECC | — | [DATA_NEEDED: on-die ECC support] |
| Package Height | — | [DATA_NEEDED: package height] |