K4RAH165VB-BCWM vs K4RAH165VB-BCQK Comparison
Detailed side-by-side comparison of K4RAH165VB-BCWM by Samsung Electronics and K4RAH165VB-BCQK by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung
K4RAH165VB-BCQK ✓ ActiveSpecification Comparison
| Parameter | K4RAH165VB-BCWM | K4RAH165VB-BCQK |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $9.92 | $0.00 |
| Memory Type | DDR5 SDRAM (volatile DRAM) | DDR5 SDRAM |
| Memory Size | 16 Gb | 16 Gb |
| Memory Organization | 1G x 16 | 1G x 16 |
| Memory Interface | Parallel | Parallel |
| Supply Voltage | 1.1 V | — |
| Technology | DDR5 | — |
| Package | FBGA-106 | 106-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +85C | 0C to +85C |
| Maximum Data Rate (DDR5 family) | up to 7200 Mbps | — |
| On-die ECC | Yes | — |
| Auto Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Speed Grade (suffix BCWM) | [DATA_NEEDED: speed grade / CAS latency] | — |
| Packaging | Tray | Tray |
| Data Rate | — | 4800 Mbps |
| Supply Voltage (VDD) | — | 1.1 V |
| Error Correction | — | On-die ECC |
| Features | — | Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration |
| Memory Format | — | DRAM (volatile) |
| Lifecycle Status | — | Active |
| Unit Price | — | [DATA_NEEDED: unit price] |