K4RAH165VB-BCWM vs PDRQL8KCBF12-00 Comparison
Detailed side-by-side comparison of K4RAH165VB-BCWM by Samsung Electronics and PDRQL8KCBF12-00 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4RAH165VB-BCWM | PDRQL8KCBF12-00 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $9.92 | $18.00 |
| Memory Type | DDR5 SDRAM (volatile DRAM) | DDR5 SDRAM |
| Memory Size | 16 Gb | — |
| Memory Organization | 1G x 16 | — |
| Memory Interface | Parallel | — |
| Supply Voltage | 1.1 V | 1.1 V |
| Technology | DDR5 | — |
| Package | FBGA-106 | FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +85C | [DATA_NEEDED: Operating temperature range] |
| Maximum Data Rate (DDR5 family) | up to 7200 Mbps | — |
| On-die ECC | Yes | Yes |
| Auto Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| RoHS Status | Compliant | Compliant |
| Speed Grade (suffix BCWM) | [DATA_NEEDED: speed grade / CAS latency] | — |
| Packaging | Tray | — |
| Density | — | 16 Gb |
| Organization | — | 2G x 8 |
| Data Rate | — | 7200 MT/s |
| Burst Length | — | 16 (BL16), burst chop 8 (BC8) |
| Refresh | — | Auto-refresh and self-refresh |
| Interface | — | Pseudo-differential DQ |
| Process Technology | — | 10nm-class |
| Lead-Free | — | Yes |