K4RHE086VP vs K4RAH086VP-BCWM Comparison
Detailed side-by-side comparison of K4RHE086VP by Samsung Electronics and K4RAH086VP-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4RHE086VP | K4RAH086VP-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DDR5 | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $9.90 | $0.00 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Density | 24 Gb | — |
| Organization | x8 | — |
| Process Node | 1a-class (D1a) | — |
| Package Type | FBGA | — |
| Mounting Type | Surface Mount | Surface Mount |
| Interface Type | DDR5 (double data rate 5) | — |
| Maximum Data Rate | [DATA_NEEDED: speed bin data rate] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: VDD in V] | — |
| On-Die ECC | Yes (DDR5 standard feature) | — |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| Operating Temperature Range | [DATA_NEEDED: temperature range] | — |
| Brand | Samsung Electronics | — |
| Product Family | Samsung K4RHE DDR5 series | — |
| Typical Application | Server / client DRAM modules | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | unknown |
| Memory Size | — | 16 Gb |
| Memory Organization | — | 2G x 8 |
| Data Rate | — | 5600 Mbps/pin |
| Supply Voltage | — | 1.1 V |
| Interface | — | Parallel |
| Technology | — | DRAM DDR5 |
| Memory Format | — | DRAM |
| Volatile / Non-Volatile | — | Volatile |
| Package | — | [DATA_NEEDED: exact FBGA package code and body size] |
| Packaging | — | Tray |
| Application Segment | — | Industrial |
| Operating Temperature | — | [DATA_NEEDED: operating temperature range] |
| Lifecycle Status | — | Active |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |