K6X0808C1D-GF55000 vs K6X0808C1D-GF70000 Comparison
Detailed side-by-side comparison of K6X0808C1D-GF55000 by Samsung Electronics and K6X0808C1D-GF70000 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K6X0808C1D-GF55000 - 32Kx8 Async SRAM 55ns | Samsung Semiconductor
K6X0808C1D-GF55000 ✓ ActiveSamsung Electronics
K6X0808C1D-GF70000 - 256Kbit 5V SRAM 70ns | Samsung | 28-SOP
K6X0808C1D-GF70000 ✓ ActiveSpecification Comparison
| Parameter | K6X0808C1D-GF55000 | K6X0808C1D-GF70000 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.20 | $1.10 |
| Memory Type | SRAM - Asynchronous | SRAM - Asynchronous |
| Memory Size | 256 Kbit | 256 Kbit |
| Organization | 32K x 8 | 32K x 8 bit |
| Access Time | 55 ns | 70 ns |
| Interface | Parallel | Parallel |
| Supply Voltage | 5 V | — |
| Mounting Type | Surface Mount | Surface Mount |
| Package | 28-SOP | 28-SOP |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Operating Current | [DATA_NEEDED: operating current] | [DATA_NEEDED: operating current] |
| Write Cycle Time | [DATA_NEEDED: write cycle time] | — |
| Output Type | Three-state, common data I/O | — |
| Control Signals | CE, OE, WE (active low) | CE, OE, WE |
| Memory Format | Volatile, no refresh required | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Technology | Low-power CMOS | Low Power CMOS |
| Supply Voltage - Min | — | 4.5 V |
| Supply Voltage - Max | — | 5.5 V |
| Address Bus Width | — | 15 bit (A0-A14) |
| Data Bus Width | — | 8 bit (tri-state I/O) |
| Input/Output Levels | — | TTL compatible |