K9CHGY8S5C-CCK0 vs K9HQGY8S5M Comparison
Detailed side-by-side comparison of K9CHGY8S5C-CCK0 by Samsung Electronics and K9HQGY8S5M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ ActiveSamsung Electronics
K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage
K9HQGY8S5M ✓ ActiveSpecification Comparison
| Parameter | K9CHGY8S5C-CCK0 | K9HQGY8S5M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $0.00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | NAND Flash Memory | 3D V-NAND Flash Memory (stacked, client NAND) |
| Package | BGA-316 | — |
| Organization | x8 (8-bit data access), quad CE configuration | — |
| Chip Enable Count | 16 (CE_n) | — |
| Pin Reduction | Not used | — |
| Supply Rail VCC | 1.83 V | — |
| Supply Rail (secondary) | 1.84 V | — |
| Supply Rail VCCQ-class | 2.96 V | — |
| Program/Erase Supply Rail | 12 V domain | — |
| Memory Technology | [DATA_NEEDED: cell type / V-NAND generation] | — |
| Density | [DATA_NEEDED: total density in Gb] | [DATA_NEEDED: total bit density] |
| Interface Type | [DATA_NEEDED: toggle DDR / ONFI, max data rate] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Mounting Type | Surface Mount (BGA reflow) | Surface Mount (BGA) |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | [DATA_NEEDED: P/E endurance rating] |
| Package Type | — | 316-ball Fine Pitch BGA (FBGA-316) |
| Die Configuration | — | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) |
| NAND Technology | — | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) |
| Memory Class | — | Non-volatile NAND flash |
| Interface | — | NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] |
| Supply Voltage | — | [DATA_NEEDED: VCC range] |
| Block Size | — | [DATA_NEEDED: block size] |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Original Application | — | Samsung SSD 850 Pro solid-state drive |