K9CHGY8S5C-CCK0 vs K9HQGY8S5M Сравнение
Подробное сравнение бок о бок K9CHGY8S5C-CCK0 от Samsung Electronics и K9HQGY8S5M от Samsung Electronics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Samsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ АктивенSamsung Electronics
K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage
K9HQGY8S5M ✓ АктивенСравнение характеристик
| Параметр | K9CHGY8S5C-CCK0 | K9HQGY8S5M |
|---|---|---|
| Бренд | Samsung Electronics | Samsung Electronics |
| Категория | Memory ICs | Memory ICs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | NAND Flash Memory | 3D V-NAND Flash Memory (stacked, client NAND) |
| Корпус | BGA-316 | — |
| Организация памяти | x8 (8-bit data access), quad CE configuration | — |
| Chip Enable Count | 16 (CE_n) | — |
| Pin Reduction | Not used | — |
| Supply Rail VCC | 1.83 V | — |
| Supply Rail (secondary) | 1.84 V | — |
| Supply Rail VCCQ-class | 2.96 V | — |
| Program/Erase Supply Rail | 12 V domain | — |
| Memory Technology | [DATA_NEEDED: cell type / V-NAND generation] | — |
| Density | [DATA_NEEDED: total density in Gb] | [DATA_NEEDED: total bit density] |
| Тип интерфейса | [DATA_NEEDED: toggle DDR / ONFI, max data rate] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Рабочая температура | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Тип монтажа | Surface Mount (BGA reflow) | Surface Mount (BGA) |
| Статус RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | [DATA_NEEDED: P/E endurance rating] |
| Package Type | — | 316-ball Fine Pitch BGA (FBGA-316) |
| Die Configuration | — | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) |
| NAND Technology | — | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) |
| Memory Class | — | Non-volatile NAND flash |
| Интерфейс | — | NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] |
| Напряжение питания | — | [DATA_NEEDED: VCC range] |
| Block Size | — | [DATA_NEEDED: block size] |
| Уровень MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Original Application | — | Samsung SSD 850 Pro solid-state drive |