K9CHGY8S5C-CCK0 vs K9HQGY8S5M Vergleich
Detaillierter Direktvergleich von K9CHGY8S5C-CCK0 von Samsung Electronics und K9HQGY8S5M von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ AktivSamsung Electronics
K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage
K9HQGY8S5M ✓ AktivSpezifikationsvergleich
| Parameter | K9CHGY8S5C-CCK0 | K9HQGY8S5M |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | NAND Flash Memory | 3D V-NAND Flash Memory (stacked, client NAND) |
| Gehäuse | BGA-316 | — |
| Speicherorganisation | x8 (8-bit data access), quad CE configuration | — |
| Chip Enable Count | 16 (CE_n) | — |
| Pin Reduction | Not used | — |
| Supply Rail VCC | 1.83 V | — |
| Supply Rail (secondary) | 1.84 V | — |
| Supply Rail VCCQ-class | 2.96 V | — |
| Program/Erase Supply Rail | 12 V domain | — |
| Memory Technology | [DATA_NEEDED: cell type / V-NAND generation] | — |
| Density | [DATA_NEEDED: total density in Gb] | [DATA_NEEDED: total bit density] |
| Schnittstellentyp | [DATA_NEEDED: toggle DDR / ONFI, max data rate] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Montageart | Surface Mount (BGA reflow) | Surface Mount (BGA) |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | [DATA_NEEDED: P/E endurance rating] |
| Package Type | — | 316-ball Fine Pitch BGA (FBGA-316) |
| Die Configuration | — | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) |
| NAND Technology | — | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) |
| Memory Class | — | Non-volatile NAND flash |
| Schnittstelle | — | NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] |
| Versorgungsspannung | — | [DATA_NEEDED: VCC range] |
| Block Size | — | [DATA_NEEDED: block size] |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Original Application | — | Samsung SSD 850 Pro solid-state drive |