K9DUGB8S7M vs K9HQGY8S5M Comparison
Detailed side-by-side comparison of K9DUGB8S7M by Samsung Electronics and K9HQGY8S5M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage
K9HQGY8S5M ✓ ActiveSpecification Comparison
| Parameter | K9DUGB8S7M | K9HQGY8S5M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $0.00 |
| Memory Type | NAND Flash | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Ordering Code | K9DUGB8S7M-DCK0 | — |
| Interface | [DATA_NEEDED: interface type (x8/x16 asynchronous NAND)] | NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] |
| Memory Capacity | [DATA_NEEDED: total capacity] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Supply Voltage | [DATA_NEEDED: supply voltage range] | [DATA_NEEDED: VCC range] |
| Package Type | [DATA_NEEDED: package type] | 316-ball Fine Pitch BGA (FBGA-316) |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| Access Time / Timing Grade | [DATA_NEEDED: speed grade] | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| ECC Requirement | [DATA_NEEDED: ECC scheme] | — |
| RoHS Status | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Product Type | — | 3D V-NAND Flash Memory (stacked, client NAND) |
| Die Configuration | — | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) |
| NAND Technology | — | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) |
| Memory Class | — | Non-volatile NAND flash |
| Density | — | [DATA_NEEDED: total bit density] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance rating] |
| Original Application | — | Samsung SSD 850 Pro solid-state drive |