K9DUGB8S7M vs K9HQGY8S5M Vergleich

Detaillierter Direktvergleich von K9DUGB8S7M von Samsung Electronics und K9HQGY8S5M von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Samsung Electronics
K9DUGB8S7M K9DUGB8S7M - Samsung NAND Flash Memory IC | Samsung

K9DUGB8S7M - Samsung NAND Flash Memory IC | Samsung

K9DUGB8S7M ✓ Aktiv
Samsung Electronics
K9HQGY8S5M K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage

K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage

K9HQGY8S5M ✓ Aktiv

Spezifikationsvergleich

Parameter K9DUGB8S7M K9HQGY8S5M
Marke Samsung Electronics Samsung Electronics
Kategorie Memory ICs Memory ICs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,00 $0,00
Speichertyp NAND Flash —
Manufacturer Samsung Electronics Samsung Electronics
Ordering Code K9DUGB8S7M-DCK0 —
Schnittstelle [DATA_NEEDED: interface type (x8/x16 asynchronous NAND)] NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode]
Memory Capacity [DATA_NEEDED: total capacity] —
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Versorgungsspannung [DATA_NEEDED: supply voltage range] [DATA_NEEDED: VCC range]
Package Type [DATA_NEEDED: package type] 316-ball Fine Pitch BGA (FBGA-316)
Montageart Surface Mount Surface Mount (BGA)
Access Time / Timing Grade [DATA_NEEDED: speed grade] —
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Endurance [DATA_NEEDED: program/erase cycles] —
ECC Requirement [DATA_NEEDED: ECC scheme] —
RoHS-Status [DATA_NEEDED: RoHS compliance] [DATA_NEEDED: RoHS status]
MSL-Level [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
Product Type — 3D V-NAND Flash Memory (stacked, client NAND)
Die Configuration — 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis)
NAND Technology — 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis)
Memory Class — Non-volatile NAND flash
Density — [DATA_NEEDED: total bit density]
Program/Erase Cycles — [DATA_NEEDED: P/E endurance rating]
Original Application — Samsung SSD 850 Pro solid-state drive

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