K9DUGB8S7M - Samsung NAND Flash Memory IC | Samsung
MPN: K9DUGB8S7M ✓ Active| Qty | Unit Price | Extended |
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| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
Drop-in alternatives for K9DUGB8S7M — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K9PKGY8S7M-CCK0
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$9.4 / Unit
View Datasheet →K9PKGY8S7M-CCK0
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$9.4 / Unit
View Datasheet →K9PRGY8S7M-CCK0
✅ Drop-In ⚠️ 参数待验证✓ In Stock
Contact for price
View Datasheet →K9PRGY8S7M
✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →K9HQGY8S5M
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View Datasheet →K9DUGB8S7M Maximum Ratings & Electrical Characteristics
| Memory Type | NAND Flash |
| Manufacturer | Samsung Electronics |
| Ordering Code | K9DUGB8S7M-DCK0 |
| Mounting Type | Surface Mount |
K9DUGB8S7M [data_needed: package type] Pin Configuration Guide
Complete pinout information for K9DUGB8S7M ([data_needed: package type] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
![[data_needed: package type] package pinout diagram for K9DUGB8S7M](/assets/package-diagrams/default.svg?v=1788069619)
No detailed pinout data available for K9DUGB8S7M.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K9DUGB8S7M is suitable for 6 applications: Industrial Control Systems, Embedded System Data Storage, Telecommunications Equipment, Firmware and Boot Storage, Data Loggers and Instrumentation, Legacy Board Repair and Sustainment.
Industrial Control Systems
In industrial control and factory automation equipment, the K9DUGB8S7M-DCK0 serves as non-volatile storage for firmware images, configuration parameters, and event logs. Samsung K9-family NAND provides block-erasable, page-programmable storage that survives power loss without battery backup, which is essential for controllers that may be cycled daily for years. The host MCU or NAND controller must implement the ECC scheme and bad-block management defined in the Samsung datasheet, and wear-leveling software extends endurance across the full block array. Because industrial environments span wide temperatures, verify the device operating range on the DCK0 ordering-code datasheet before final qualification, and reserve spare blocks in the bad-block table layout.
Recommended
Embedded System Data Storage
Embedded boards use the K9DUGB8S7M as raw NAND storage for application data, calibration tables, and over-the-air update staging. The standard asynchronous NAND interface latches command, address, and data on the I/O bus, making it straightforward to attach to MPUs with a NAND controller or to a general-purpose MCU using GPIO bit-banging for low-rate access. A filesystem layer such as YAFFS or a flash translation layer provides wear leveling on top of the raw device. Designers should match page size and block size in the driver to the exact values in the Samsung datasheet for the DCK0 speed grade, and validate timing registers across the full voltage and temperature range before mass production.
Recommended
Telecommunications Equipment
Telecom line cards, gateways, and network appliances rely on NAND flash such as the K9DUGB8S7M for boot code, firmware, and configuration archives that must persist across reboots and power interruptions. The non-volatile nature of floating-gate NAND storage ensures retention without refresh, while page programming supports field firmware updates in the field. In high-availability telecom designs, the boot loader should include dual-image schemes so that a failed update can be rolled back, with the NAND bad-block table stored redundantly. Confirm the ordering code K9DUGB8S7M-DCK0 speed grade against the controller timing requirements, and budget ECC overhead in the storage capacity plan.
Recommended
Firmware and Boot Storage
Many processors cannot execute directly from NAND, so the K9DUGB8S7M is commonly used as boot storage: an internal ROM copies the first pages into on-chip SRAM, which then loads the full image from NAND. This boot-from-NAND flow requires the initial loader pages to be free of bad blocks and bit errors, so manufacturers typically program the boot region with stronger ECC and duplicate it. The DCK0 suffix ordering code defines page timing that the ROM loader assumes; verify the device's page-read cycle time from the Samsung datasheet matches the ROM loader's expected timing table. Keeping a factory-programmed boot image consistent across production units simplifies manufacturing test.
Recommended
Data Loggers and Instrumentation
Battery-powered and portable instrumentation uses the K9DUGB8S7M to log measurement data over long deployments. Raw NAND offers high density at low cost per bit, and its non-volatile cells retain logged data indefinitely without power. Because program operations occur at page granularity, logger firmware typically buffers samples in SRAM and flushes full pages to minimize block churn, directly extending effective endurance. The controller must apply the datasheet-specified ECC and skip factory bad blocks. Designers of long-life loggers should also model retention at maximum operating temperature, since NAND data-retention specifications shorten as junction temperature rises, and schedule periodic data offload accordingly.
Recommended
Legacy Board Repair and Sustainment
For maintaining legacy industrial and telecom hardware designed around Samsung K9 NAND, the K9DUGB8S7M-DCK0 supports board-level repair where the storage device has failed or the design requires the originally qualified MPN. Raw NAND replacement is firmware-sensitive: the substitute must match the original's page size, block size, interface width, and timing registers, or the existing controller will fail to read the bad-block table. Repair workflows should image the failed device's content where possible, program a new device with the same image plus updated bad-block table, and verify read-back across the full array before returning the board to service.
Recommended
Recommended Products Summary
Engineering reference data for K9DUGB8S7M — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K9PKGY8S7M-CCK0 | K9PRGY8S7M | K9HQGY8S5M |
|---|---|---|---|---|
| Package | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | NAND Flash | NAND Flash | NAND Flash | NAND Flash |
| Memory Capacity | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Interface | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Supply Voltage | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Speed/Timing Suffix | S7M (DCK0 ordering code) | S7M (CCK0 ordering code) | S7M | S5M (slower grade) |
| Catalog Availability | Quote-based (spot channels) | XAIPART product page | XAIPART product page | XAIPART product page |
Key Differentiators
- Same speed suffix as available catalog alternates (vs K9PRGY8S7M)
- Quote-based sourcing protects against spot-market counterfeits (vs K9PKGY8S7M-CCK0)
- Slower-grade fallback available (vs K9HQGY8S5M)
Design Notes
Raw NAND such as the K9DUGB8S7M is not a managed storage device: the host must implement ECC, bad-block management, and wear leveling. Skip factory-marked bad blocks recorded in the initial page data, erase each block fully before programming, and never program a page twice. Using the wrong ECC scheme for the device's process generation causes uncorrectable bit errors in the field even though bench tests pass.
Verify the K9DUGB8S7M supply voltage (commonly 3.3V-class VCC for K9 asynchronous NAND, but confirm on the DCK0 datasheet) and decouple VCC with at least 0.1uF ceramic close to each supply pin. NAND program operations draw short current bursts; undersized supply decoupling shows up as write errors under load. Add bulk capacitance near the device and ensure the regulator can handle program-current transients without drooping below the datasheet minimum.
Keep the NAND I/O bus, CLE, ALE, /CE, /RE, and /WE traces short and length-matched where the controller supports fast timing grades such as the S7M suffix. Avoid routing these signals near switching-regulator nodes; the DC-DC converter feeding the rail should be placed away from the memory bus. Provide solid ground return under the bus and series termination if trace lengths exceed the controller's drive specification.
Compliance Information
Compliance status not stated in the verified web data retrieved for this MPN; request a certificate of conformance from the supplier for the specific date code.
