K9DVGY8J5M vs K9HQGY8S5M Comparison
Detailed side-by-side comparison of K9DVGY8J5M by Samsung Electronics and K9HQGY8S5M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage
K9HQGY8S5M ✓ ActiveSpecification Comparison
| Parameter | K9DVGY8J5M | K9HQGY8S5M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.00 | $0.00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | Raw NAND Flash Memory | 3D V-NAND Flash Memory (stacked, client NAND) |
| NAND Technology | Samsung V-NAND (3D TLC) | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) |
| Flash ID | EC519A3F8CCB | — |
| Density | [DATA_NEEDED: die density (Gb)] | [DATA_NEEDED: total bit density] |
| Organization (Page/Block) | [DATA_NEEDED: page and block organization] | — |
| Interface Type | [DATA_NEEDED: interface (toggle DDR / async)] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC voltage] | — |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ voltage] | — |
| Program Page Time (tPROG) | [DATA_NEEDED: tPROG typical/us] | — |
| Block Erase Time (tBERS) | [DATA_NEEDED: tBERS typical/us] | — |
| Read Time (tR) | [DATA_NEEDED: tR typical/us] | — |
| Program/Erase Endurance | [DATA_NEEDED: P/E cycle endurance] | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Package Type | [DATA_NEEDED: package type and dimensions] | 316-ball Fine Pitch BGA (FBGA-316) |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Die Configuration | — | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) |
| Memory Class | — | Non-volatile NAND flash |
| Interface | — | NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] |
| Supply Voltage | — | [DATA_NEEDED: VCC range] |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance rating] |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Original Application | — | Samsung SSD 850 Pro solid-state drive |