K9DVGY8J5M vs K9HUGY8J5B-BCK0 Comparison

Detailed side-by-side comparison of K9DVGY8J5M by Samsung Electronics and K9HUGY8J5B-BCK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K9DVGY8J5M K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M ✓ Active
Samsung Electronics
K9HUGY8J5B-BCK0 K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 ✓ Active

Specification Comparison

Parameter K9DVGY8J5M K9HUGY8J5B-BCK0
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.00 $0.00
Manufacturer Samsung Electronics Samsung Electronics
Product Type Raw NAND Flash Memory —
NAND Technology Samsung V-NAND (3D TLC) —
Flash ID EC519A3F8CCB —
Density [DATA_NEEDED: die density (Gb)] [DATA_NEEDED: device density]
Organization (Page/Block) [DATA_NEEDED: page and block organization] —
Interface Type [DATA_NEEDED: interface (toggle DDR / async)] —
Supply Voltage (VCC) [DATA_NEEDED: VCC voltage] [DATA_NEEDED: VCC range]
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ voltage] [DATA_NEEDED: VCCQ range]
Program Page Time (tPROG) [DATA_NEEDED: tPROG typical/us] —
Block Erase Time (tBERS) [DATA_NEEDED: tBERS typical/us] —
Read Time (tR) [DATA_NEEDED: tR typical/us] —
Program/Erase Endurance [DATA_NEEDED: P/E cycle endurance] —
Operating Temperature [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range]
Package Type [DATA_NEEDED: package type and dimensions] —
Mounting Type Surface Mount Surface Mount
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Product Family — K9HUG (V-NAND flash)
Memory Type — NAND Flash (3D V-NAND)
Cell Type — [DATA_NEEDED: SLC/MLC/TLC/QLC]
Organization — [DATA_NEEDED: page/block organization]
Bus Width — [DATA_NEEDED: x8 or x16]
Interface — [DATA_NEEDED: asynchronous/toggle DDR]
Page Program Time — [DATA_NEEDED: tPROG]
Page Read Time — [DATA_NEEDED: tR]
Block Erase Time — [DATA_NEEDED: tBERS]
Endurance — [DATA_NEEDED: P/E cycles]
Package — [DATA_NEEDED: package code, e.g. FBGA]

Datasheets & Resources

Browse All Products Create BOM Request Quote