K9DVGY8J5M vs K9HUGY8J5B-BCK0 Comparaison

Comparaison détaillée côte à côte de K9DVGY8J5M par Samsung Electronics et K9HUGY8J5B-BCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.

Samsung Electronics
K9DVGY8J5M K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M ✓ Actif
Samsung Electronics
K9HUGY8J5B-BCK0 K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 ✓ Actif

Comparaison des spécifications

Paramètre K9DVGY8J5M K9HUGY8J5B-BCK0
Marque Samsung Electronics Samsung Electronics
Catégorie Memory ICs Memory ICs
Statut du cycle de vie Actif Actif
Statut du stock In Stock In Stock
Prix unitaire (USD) $1,00 $0,00
Manufacturer Samsung Electronics Samsung Electronics
Product Type Raw NAND Flash Memory —
NAND Technology Samsung V-NAND (3D TLC) —
Flash ID EC519A3F8CCB —
Density [DATA_NEEDED: die density (Gb)] [DATA_NEEDED: device density]
Organization (Page/Block) [DATA_NEEDED: page and block organization] —
Type d'interface [DATA_NEEDED: interface (toggle DDR / async)] —
Supply Voltage (VCC) [DATA_NEEDED: VCC voltage] [DATA_NEEDED: VCC range]
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ voltage] [DATA_NEEDED: VCCQ range]
Program Page Time (tPROG) [DATA_NEEDED: tPROG typical/us] —
Block Erase Time (tBERS) [DATA_NEEDED: tBERS typical/us] —
Read Time (tR) [DATA_NEEDED: tR typical/us] —
Program/Erase Endurance [DATA_NEEDED: P/E cycle endurance] —
Température de fonctionnement [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range]
Package Type [DATA_NEEDED: package type and dimensions] —
Type de montage Surface Mount Surface Mount
Statut RoHS [DATA_NEEDED: RoHS status] Compliant
Product Family — K9HUG (V-NAND flash)
Type de mémoire — NAND Flash (3D V-NAND)
Cell Type — [DATA_NEEDED: SLC/MLC/TLC/QLC]
Organisation de la mémoire — [DATA_NEEDED: page/block organization]
Bus Width — [DATA_NEEDED: x8 or x16]
Interface — [DATA_NEEDED: asynchronous/toggle DDR]
Page Program Time — [DATA_NEEDED: tPROG]
Page Read Time — [DATA_NEEDED: tR]
Block Erase Time — [DATA_NEEDED: tBERS]
Endurance — [DATA_NEEDED: P/E cycles]
Boîtier — [DATA_NEEDED: package code, e.g. FBGA]

Fiches techniques et ressources

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