K9DVGY8J5M vs K9HUGY8J5B-BCK0 비교
다음의 상세 나란히 비교: K9DVGY8J5M 제조: Samsung Electronics 및 K9HUGY8J5B-BCK0 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | K9DVGY8J5M | K9HUGY8J5B-BCK0 |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | Memory ICs | Memory ICs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.00 | $0.00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | Raw NAND Flash Memory | — |
| NAND Technology | Samsung V-NAND (3D TLC) | — |
| Flash ID | EC519A3F8CCB | — |
| Density | [DATA_NEEDED: die density (Gb)] | [DATA_NEEDED: device density] |
| Organization (Page/Block) | [DATA_NEEDED: page and block organization] | — |
| 인터페이스 유형 | [DATA_NEEDED: interface (toggle DDR / async)] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC voltage] | [DATA_NEEDED: VCC range] |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ voltage] | [DATA_NEEDED: VCCQ range] |
| Program Page Time (tPROG) | [DATA_NEEDED: tPROG typical/us] | — |
| Block Erase Time (tBERS) | [DATA_NEEDED: tBERS typical/us] | — |
| Read Time (tR) | [DATA_NEEDED: tR typical/us] | — |
| Program/Erase Endurance | [DATA_NEEDED: P/E cycle endurance] | — |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| Package Type | [DATA_NEEDED: package type and dimensions] | — |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | Compliant |
| Product Family | — | K9HUG (V-NAND flash) |
| 메모리 유형 | — | NAND Flash (3D V-NAND) |
| Cell Type | — | [DATA_NEEDED: SLC/MLC/TLC/QLC] |
| 메모리 구성 | — | [DATA_NEEDED: page/block organization] |
| Bus Width | — | [DATA_NEEDED: x8 or x16] |
| 인터페이스 | — | [DATA_NEEDED: asynchronous/toggle DDR] |
| Page Program Time | — | [DATA_NEEDED: tPROG] |
| Page Read Time | — | [DATA_NEEDED: tR] |
| Block Erase Time | — | [DATA_NEEDED: tBERS] |
| Endurance | — | [DATA_NEEDED: P/E cycles] |
| 패키지 | — | [DATA_NEEDED: package code, e.g. FBGA] |