Samsung Electronics

K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

MPN: K9F6408U0B βœ— End of Life
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2.7 V to 3.6 V Vdss 44-TSOP2 Package 8M x 8 bit (64Mbit) Memory
From $3.2 USD / Unit
MOQ: 1 |
Price updated: 2026-09-03
Volume Pricing
Qty Unit Price Extended
1 $4.95 $4.95
10 $4.45 $44.50
100 $3.95 $395.00
500 $3.55 $1,775.00
1,000 $3.2 $3,200.00
ℹ️ All prices are in USD

Drop-in alternatives for K9F6408U0B β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

K9F6408U0B-TCB0

βœ… Drop-In
πŸ“¦ 44-TSOP2
same die and package; commercial temperature grade 0C to 70C (target part designation covers both TCB0/TIB0 grades)

πŸ“‹ Reference alternative (not in catalog)

K9F6408U0B-TIB0

βœ… Drop-In
πŸ“¦ 44-TSOP2
same die and package; industrial temperature grade -40C to 85C vs 0C to 70C commercial grade (+115C wider range)

πŸ“‹ Reference alternative (not in catalog)

K9F6408Q0C

βœ… Drop-In
Samsung Electronics
πŸ“¦ [DATA_NEEDED: package confirmation]
NAND Flash (SLC) Β· 64 Mbit (8 M x 8 bit main + 256 K x 8 bit spare) Β· 8M x 8 Β· Parallel, 8-bit multiplexed I/O Β· 1.65 V to 1.95 V Β· 10 us (read cycle, family listing) Β· 528 bytes (512 data + 16 spare) Β· C (commercial), i (industrial)

βœ“ In Stock

$1.31 / Unit

View Datasheet β†’

K9F6408U0B Maximum Ratings & Electrical Characteristics

Memory Organization 8M x 8 bit (64Mbit)
Memory Type NAND Flash
Operating Voltage (VCC) 2.7 V to 3.6 V
Access Time / Cycle Time 50 ns
Package 44-TSOP2
Page Size 528 bytes (512 data + 16 spare)
Program/Erase Endurance 100K program/erase cycles
Interface 8-bit multiplexed command/address/data I/O
Write Protect Yes (WP pin)
Ready/Busy Output Yes (R/B open-drain)
Operating Temperature (TCB0 grade) 0C to 70C
Operating Temperature (TIB0 grade) -40C to 85C
Mounting Type Surface Mount
Production Status (per datasheet) Mass Production (legacy; now obsolete)

K9F6408U0B 44-tsop2 Pin Configuration Guide

Complete pinout information for K9F6408U0B (44-tsop2 package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

44-tsop2 package pinout diagram for K9F6408U0B

No detailed pinout data available for K9F6408U0B.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for K9F6408U0B Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

K9F6408U0B is suitable for 6 applications: Embedded Boot Code Storage, Industrial Data Loggers, Set-Top Boxes and Consumer Electronics, Printer Firmware Storage, Legacy Networking Equipment, Automotive and Rugged Telematics (Legacy Retrofits).

πŸ”§

Embedded Boot Code Storage

The K9F6408U0B stores bootloader and firmware images in embedded systems thanks to its 8MB capacity and 2.7V to 3.6V supply that matches 3.3V microcontroller and SoC rails directly. The 8-bit multiplexed command/address/data interface connects to the host memory controller with only CLE, ALE, CE, RE, and WE control lines, while the open-drain R/B output signals program and erase completion. Because it is raw NAND, the host must implement Hamming ECC in the 16-byte spare area and bad-block management, giving roughly 100K program/erase cycles of media life when wear is spread across all 1024 blocks.

🏭

Industrial Data Loggers

Industrial data-logging equipment uses the K9F6408U0B to retain measurement history across power cycles, valuing its non-volatile NAND storage and -40C to 85C capability in the K9F6408U0B-TIB0 industrial temperature grade. The 50ns access time supports fast sequential reads when records are uploaded, while page programming writes sensor samples efficiently in 512-byte pages. Designers should implement a power-fail routine that aborts in-flight page programs on brown-out, since interrupting a program cycle within the 2.7V to 3.6V operating window can corrupt the active page; block-level wear leveling across the device extends service life toward the specified 100K cycles.

πŸ“Ί

Set-Top Boxes and Consumer Electronics

Set-top boxes, DVD players, and consumer appliances of the K9F6408U0B era used this device for channel maps, settings, and firmware storage, exploiting its low cost per bit and compact 44-TSOP2 footprint on cost-sensitive PCBs. The 8MB organization comfortably stores configuration plus fallback firmware, and the WP pin allows hardware write protection once provisioning is complete, preventing accidental corruption by buggy software. Replacement sourcing today is limited to residual stock; for service and repair of this equipment class, K9F6408U0B-TCB0 and K9F6408U0B-TIB0 remain the correct pin-compatible spares.

πŸ–¨οΈ

Printer Firmware Storage

Laser and inkjet printers used small NAND devices like the K9F6408U0B to store firmware, fonts, and page-description resources, since 8MB suffices for these assets and the device's 50ns serial access keeps boot time acceptable. The standard Samsung small-block command set allowed one host driver to manage firmware updates by reprogramming designated blocks after erase, with status-command polling confirming each successful page write. Its 2.7V to 3.6V supply integrated cleanly with 3.3V printer mainboards, and the surface-mount TSOP2 package supported automated assembly in high-volume manufacturing.

🌐

Legacy Networking Equipment

Routers, switches, and access points from the late 1990s and 2000s stored their OS images and configurations in K9F6408U0B-class NAND, combining 8MB of density with the economy of small-block SLC NAND. The multiplexed 8-bit I/O bus kept the host interface to about a dozen signals, simplifying layout around the network processor, while the open-drain R/B line allowed simple polling or interrupt-driven completion detection. Maintenance teams repairing this installed base should hold K9F6408U0B-TCB0/TIB0 spares, since the part is obsolete and no cross-brand 44-TSOP2 drop-in exists.

πŸš—

Automotive and Rugged Telematics (Legacy Retrofits)

Retrofit and aftermarket telematics modules requiring extended temperature range can use the K9F6408U0B-TIB0 grade, which is rated from -40C to 85C in the same 44-TSOP2 footprint as the commercial part. Its 100K program/erase endurance supports moderate write traffic when the host applies wear leveling and reserves spare blocks, and the WP pin provides a hardware interlock for calibration data written once at the factory. Note this device is not AEC-Q100 qualified; for new automotive designs, select a qualified modern NAND rather than this legacy generation.

Recommended Products Summary

K9F1208U0B Higher-density same-family NAND for expanded firmware images Used in: Embedded Boot Code Storage, Printer Firmware Storage TMS320F28034PNTR Texas Instruments Used in: Embedded Boot Code Storage K9F6408U0B-TIB0 Industrial temperature grade of same device Used in: Industrial Data Loggers, Legacy Networking Equipment, Automotive and Rugged Telematics (Legacy Retrofits) SN74HC21DR Texas Instruments Used in: Industrial Data Loggers K9F6408U0B-TCB0 Commercial-grade drop-in variant Used in: Set-Top Boxes and Consumer Electronics K4A4G085WD Samsung Electronics Used in: Set-Top Boxes and Consumer Electronics SN74HC21QPWRQ1 Texas Instruments Used in: Printer Firmware Storage SN74AUP1T34DCKR Texas Instruments Used in: Legacy Networking Equipment TPS54218RTER Texas Instruments Used in: Automotive and Rugged Telematics (Legacy Retrofits)
What is the K9F6408U0B and what are its key specifications?
The K9F6408U0B is a Samsung 64Mbit (8M x 8 bit) NAND Flash memory operating from a 2.7V to 3.6V single supply with a 50ns access speed in a 44-pin TSOP2 package. It uses an 8-bit multiplexed command/address/data bus, supports page program and block erase operations, and includes WP write protection and an R/B ready/busy output. According to the Samsung datasheet, endurance is specified at 100K program/erase cycles, and the part is organized with 528-byte pages.
Is the K9F6408U0B still in production?
No, the K9F6408U0B is an obsolete legacy NAND Flash. Although the Samsung datasheet lists 'Mass Production' status from its original release era, Samsung has long since discontinued this small-density generation (16Mbit to 128Mbit) in favor of gigabit-scale SLC/MLC NAND. Remaining supply comes from distributor residual stock and excess inventory, so lead times and availability are unpredictable; drop-in variants K9F6408U0B-TCB0 and K9F6408U0B-TIB0 share the same availability constraints.
What is the difference between K9F6408U0B-TCB0 and K9F6408U0B-TIB0?
The only functional difference is the operating temperature range. Per the Samsung datasheet, K9F6408U0B-TCB0 is rated for commercial temperatures (TA = 0C to 70C), while K9F6408U0B-TIB0 is rated for industrial temperatures (TA = -40C to 85C). Both are identical electrically - 8M x 8 bit organization, 2.7V to 3.6V supply, 50ns access - and share the same 44-TSOP2 package, so the TIB0 industrial grade can replace the TCB0 in any design.
Where can I buy K9F6408U0B and how much does it cost?
The K9F6408U0B can be sourced through XAIPART and specialist legacy-IC distributors and excess-inventory brokers, since mainstream authorized distributors no longer carry it. As of 2026-09-04, estimated pricing on XAIPART starts at about $4.95 at quantity 1, dropping to roughly $3.20 at quantity 1000. Because this part is obsolete, prices vary significantly by lot age and stock source - request a quote for firm pricing and lead time before committing a BOM.
What is the best drop-in replacement for K9F6408U0B?
The closest drop-in replacements are the same-family variants K9F6408U0B-TCB0 (commercial temp) and K9F6408U0B-TIB0 (industrial temp, -40C to 85C), which are pin-to-pin identical in the 44-TSOP2 package. No cross-brand pin-compatible equivalent was found in cross-reference searches, which is typical for proprietary Samsung NAND pinouts of this generation. For new designs, migration to a modern small NAND (e.g., 1Gbit SLC in a different package) requires PCB redesign, not a drop-in swap.
What is the operating voltage range of K9F6408U0B?
The K9F6408U0B operates from a single 2.7V to 3.6V supply, making it suitable for 3.0V and 3.3V systems. According to the Samsung datasheet recommended operating conditions, VCC must remain within this window during program and erase operations for data integrity; brown-out conditions during a program cycle can corrupt the page being written, so designers should implement supply supervision or power-fail handling in the host firmware.
Where can I download the K9F6408U0B datasheet PDF?
The official Samsung K9F6408U0B datasheet (27 pages, titled '8M x 8 Bit NAND Flash Memory') is available as a PDF from datasheet archive services such as alldatasheet.com, which hosts the Samsung-authored document covering the K9F6408U0B-TCB0 and K9F6408U0B-TIB0 grades. Samsung no longer lists this discontinued part on its official website, so third-party datasheet mirrors linked from this page are the practical source. Always verify the revision history page for the endurance specification change.
Where can I find the K9F6408U0B pinout for the 44-TSOP2 package?
The complete 44-TSOP2 pinout is shown in the pin configuration section of the Samsung K9F6408U0B datasheet (27 pages). Key signals include the 8-bit I/O bus (I/O0 through I/O7), control pins CLE, ALE, CE, RE, WE, WP, the R/B ready/busy output, VCC and VSS power pins, and a SE (spare/second enable) pin, with the remaining pins as no-connects. Download the datasheet PDF linked on this page for the pin-by-pin diagram before layout.
K9F6408U0B vs K9F1208U0B - which should I use?
They are different densities: the K9F6408U0B is 64Mbit (8MB) while the K9F1208U0B is 512Mbit (64MB), so they are not interchangeable. The K9F1208U0B uses a different address cycle count and page/block organization, so firmware addressing differs. If your design needs more than 8MB, choose the K9F1208U0B family and update the driver; if the PCB footprint must stay unchanged and 8MB suffices, stay with K9F6408U0B variants. Both are legacy parts with limited supply, so verify stock for either before designing in.
When should I choose K9F6408U0B over a modern NAND Flash?
Choose the K9F6408U0B only when maintaining an existing PCB design that already uses its 44-TSOP2 footprint and legacy firmware driver - for example, sustaining production of older industrial equipment, printers, or networking hardware. For any new design, a modern small SLC NAND offers larger density, better endurance, active manufacturer support, and RoHS-compliant lead-free packages at lower cost. The K9F6408U0B's value is design continuity, not performance; its 50ns access and 100K-cycle endurance are outclassed by current parts.
Is K9F6408U0B suitable for boot code storage in embedded systems?
Yes, the K9F6408U0B was widely used for boot and firmware storage in embedded systems because its 8MB capacity comfortably holds bootloader plus application code, and its 2.7V to 3.6V supply matches 3.3V microprocessor systems. Note that raw NAND requires the host to implement ECC and bad-block management - the controller must read status after program/erase operations and use the R/B pin or status polling to detect completion. Modern replacements integrate these functions, which is why they are preferred for new boot designs.
What ECC do I need for K9F6408U0B?
The K9F6408U0B is raw NAND, so error correction code must be implemented in the host controller - the device provides no internal ECC. Each 512-byte data sector has a 16-byte spare area, of which part is conventionally used to store ECC check bytes, typically computed with a Hamming code capable of single-bit correction per 512-byte sector. According to legacy Samsung small-NAND design practice, always program the spare-area ECC last and verify status after each page program to detect write failures.
Hey Google, what can replace a K9F6408U0B chip?
You can replace a K9F6408U0B with its identical-family grades K9F6408U0B-TCB0 or K9F6408U0B-TIB0 - these are pin-to-pin drop-in parts in the same 44-TSOP2 package; the TIB0 adds industrial -40C to 85C temperature rating. No cross-brand pin-compatible equivalent exists in cross-reference databases because Samsung's small-NAND pinout is proprietary. If PCB redesign is acceptable, modern 1Gbit SLC NAND devices offer a forward path, but they use different packages and require firmware changes.
What is the Samsung equivalent for K9F6408U0B from other brands (cross-brand alternative)?
There is no verified cross-brand drop-in equivalent for the K9F6408U0B. Cross-reference searches across DigiKey, Octopart, and vendor cross-reference tools returned no pin-compatible 44-TSOP2 NAND from Toshiba/Kioxia, Micron, Hynix, or others, since this 64Mbit generation predates industry pinout standardization of the ONFI era. Engineers needing a second source must qualify a different package (e.g., 48-pin TSOP1 large-block NAND) with a PCB and firmware update, or rely on same-family Samsung grades TCB0 and TIB0.
What are the program and erase operation details of K9F6408U0B?
The K9F6408U0B programs one 528-byte page at a time and erases one block at a time, using the standard Samsung small-block command set (serial data input, page program, block erase, and status commands). Per the datasheet revision history, endurance is 100K program/erase cycles, and a 'don't care' mode in address cycles was added in a later revision to relax host timing. NAND architecture requires erasing a block (setting all bits to 1) before reprogramming, so wear-leveling at the block level should be implemented in the host file system or FTL layer.

Engineering reference data for K9F6408U0B β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the K9F6408U0B only when sustaining an existing PCB design that already uses its 44-TSOP2 footprint and legacy small-block Samsung command set - the variants K9F6408U0B-TCB0 (0C to 70C) and K9F6408U0B-TIB0 (-40C to 85C) are electrically identical, so select by temperature environment and both are drop-in. Choose K9F6408Q0C only after verifying its pinout and firmware compatibility, as it is a later-generation part with uncertain drop-in status. If your board can be redesigned, prefer modern SLC NAND: current parts deliver gigabit densities, integrated ECC options, active manufacturer lifecycle support, and lower cost, whereas the K9F6408U0B family is obsolete with 100K-cycle endurance and supply limited to residual distributor stock. In short: this part buys design continuity, not performance - budget requalification effort for any non-TCB0/TIB0 alternative.

Comparison with Alternatives

Parameter This Product K9F6408U0B-TCB0 K9F6408U0B-TIB0 K9F6408Q0C
Package 44-TSOP2 44-TSOP2 - same 44-TSOP2 - same [DATA_NEEDED]
Brand Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics
Density / Organization 64Mbit (8M x 8) 64Mbit (8M x 8) 64Mbit (8M x 8) 64Mbit (8M x 8)
Supply Voltage 2.7 V to 3.6 V 2.7 V to 3.6 V 2.7 V to 3.6 V [DATA_NEEDED]
Access Time 50 ns 50 ns 50 ns [DATA_NEEDED]
Operating Temperature 0C to 70C (TCB0) / -40C to 85C (TIB0) 0C to 70C -40C to 85C [DATA_NEEDED]
Endurance 100K program/erase cycles 100K program/erase cycles 100K program/erase cycles [DATA_NEEDED]
Lifecycle Status Obsolete Obsolete Obsolete [DATA_NEEDED]

Key Differentiators

  • Extended industrial temperature option (vs K9F6408U0B-TCB0)
  • Guaranteed same-family compatibility (vs K9F6408Q0C)
  • Compact legacy footprint (vs K9F1208U0B)

Design Notes

The K9F6408U0B is raw NAND: the host controller must implement ECC (a Hamming code with single-bit correction per 512-byte sector stored in the 16-byte spare area) and bad-block management. The datasheet revision history notes endurance changed from 1 million to 100K program/erase cycles - do not design write budgets around the older figure. Also, never interrupt a page program or block erase; ensure VCC stays within 2.7V to 3.6V and use the WP pin during power transitions to prevent spurious writes.

Decouple VCC with 0.1uF ceramic capacitors placed within a few millimeters of each VCC pin on the 44-TSOP2 package, since program and erase operations draw transient currents on the 2.7V to 3.6V rail. Keep the CE, CLE, ALE, RE, and WE control lines short and routed away from the I/O bus to prevent glitch-induced command corruption. The open-drain R/B output requires a pull-up resistor (typical 10k ohm) to VCC.

Estimated: NAND program/erase currents are transient (tens of mA peaks on the 2.7V to 3.6V rail per legacy small-block NAND design practice). Size the 3.3V supply with headroom above the average read current and ensure supply rise-time and power-up sequencing meet the datasheet power-up waveform requirements so the internal command register initializes cleanly before the first access.

Compliance Information

RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Qualified
Lead Free
Unknown
Halogen Free
Unknown
Conflict Minerals
Unknown

This part predates modern RoHS/REACH documentation requirements; no compliance data was found in the provided sources. Not AEC-Q100 qualified - not designed for automotive use.

Data verified on: 2026-09-04 β€” data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Samsung Electronics K9F6408U0B K9F6408U0B-TCB0 K9F6408U0B-TIB0 K9F6408Q0C K9F1208U0B NAND Flash non-volatile memory 8M x 8 bit organization 44-TSOP2 TSOP package family surface mount small-block NAND ECC (error correction code) bad-block management program/erase endurance 100K cycles 2.7V to 3.6V supply 50ns access time R/B ready-busy output WP write protect RoHS obsolete / EOL component industrial data logging embedded boot storage
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