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Samsung Electronics

K9F2808Q0B - 128Mb SLC NAND Flash 1.8V 63-TBGA | Samsung

MPN: K9F2808Q0B ✗ End of Life
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1.7 V to 1.95 V Vdss [DATA_NEEDED: Icc1] Id 63-pin TBGA Package 50 ns Speed SLC NAND Flash (parallel) Memory
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Price updated: 2026-09-03
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Drop-in alternatives for K9F2808Q0B — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

K9F6408Q0C

✅ Drop-In
Samsung Electronics
📦 63-TBGA
NAND Flash (SLC) · 64 Mbit (8 M x 8 bit main + 256 K x 8 bit spare) · 8M x 8 · Parallel, 8-bit multiplexed I/O · 1.65 V to 1.95 V · 10 us (read cycle, family listing) · 528 bytes (512 data + 16 spare) · C (commercial), i (industrial)

✓ In Stock

$1.31 / Unit

View Datasheet →

K9F6408U0B

✅ Drop-In
Samsung Electronics
📦 63-TBGA
8M x 8 bit (64Mbit) · NAND Flash · 2.7 V to 3.6 V · 50 ns · 44-TSOP2 · 528 bytes (512 data + 16 spare) · [DATA_NEEDED: block organization from datasheet] · 100K program/erase cycles

✓ In Stock

$3.2 / Unit

View Datasheet →

K9F2808U0B-DCB0

✅ Drop-In ⚠️ 参数待验证
📦 63-TBGA
Same 16M x 8 organization and package family but 3.3 V supply vs 1.8 V (+83%); NOT usable on a 1.8 V rail without level translation

📋 Reference alternative (not in catalog)

K9F2808U0B-DIB0

✅ Drop-In ⚠️ 参数待验证
📦 63-TBGA
Industrial temperature variant of the 3.3 V 16M x 8 sibling; same density and package family, different supply voltage (3.3 V vs 1.8 V)

📋 Reference alternative (not in catalog)

K9F2808Q0B Maximum Ratings & Electrical Characteristics

Memory Type SLC NAND Flash (parallel)
Density 128 Mbit
Organization 16M x 8
Operating Voltage (VCC) 1.7 V to 1.95 V
Read Access Speed 50 ns
Cell Type SLC (1 bit/cell)
Interface 8-bit multiplexed address/data
Package 63-pin TBGA
Temperature Grade C (commercial), I (industrial)
Mounting Type Surface Mount
RoHS Status unknown
Production Status Mass production (per legacy datasheet); now EOL/obsolete

K9F2808Q0B 63-pin tbga Pin Configuration Guide

Complete pinout information for K9F2808Q0B (63-pin tbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

63-pin tbga package pinout diagram for K9F2808Q0B

No detailed pinout data available for K9F2808Q0B.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for K9F2808Q0B Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

K9F2808Q0B is suitable for 6 applications: Embedded System Boot Storage, Set-Top Box and Consumer Electronics Firmware, Industrial Data Loggers, Legacy Equipment Maintenance and Repair, Handheld and Portable Instruments, Networking Equipment Configuration Storage.

🔧

Embedded System Boot Storage

The K9F2808Q0B stores boot code and configuration parameters in embedded systems where the processor already boots from a Samsung small-block NAND command set. Its 16M x 8 organization provides 16 MB of code space - ample for bootloaders, kernel images, and factory settings - while the 1.7 V to 1.95 V rail matches modern low-voltage microcontroller I/O. SLC cells retain data reliably across power cycles with 50 ns read access for fast boot sequencing. Designers must implement 1-bit-per-page ECC and bad-block scanning at the boot driver level, per Samsung's small-block NAND management scheme, since raw NAND requires controller-side error handling.

📺

Set-Top Box and Consumer Electronics Firmware

In set-top boxes and consumer media devices of the K9F design generation, the K9F2808Q0B held firmware images and channel/configuration databases on a 1.8 V rail that reduced system power versus 3.3 V NAND. The 128 Mbit density accommodated complete firmware plus user preference storage, and the 50 ns read speed supported in-place reads during firmware validation. The 63-pin TBGA package enabled compact two-sided board assembly in slim consumer enclosures. SLC endurance suited devices that rewrite settings daily; systems performing frequent recording needed external wear-leveling software to distribute erase cycles across the block array.

🏭

Industrial Data Loggers

Industrial data loggers used the K9F2808Q0B to record sensor samples and event logs, exploiting the industrial (I) temperature grade (ordering variants such as -DIB0) and SLC reliability. The 1.8 V supply reduced logger power draw during battery operation, and the multiplexed 8-bit interface connected easily to low-pin-count microcontrollers through GPIO or memory controllers. The 16 MB capacity stored months of timestamped records, while SLC's wide noise margins protected data against the electrical noise typical of factory floors. Loggers must implement block wear leveling and power-fail recovery, since program interruption mid-page can corrupt the page, per Samsung's NAND management guidelines.

🔧

Legacy Equipment Maintenance and Repair

For maintaining installed bases of equipment designed around the K9F2808Q0B, service organizations source this exact MPN because firmware images and address maps are hard-coded to its 16M x 8 geometry and 1.8 V rail. The 63-pin TBGA footprint and Samsung command-set timing mean a same-MPN replacement restores operation without firmware changes. Repair stock should be date-code controlled, since stored SLC NAND can accumulate bit errors over many years; reprogramming the spare parts and verifying ECC counters during service is recommended. Aftermarket channels and quote-based sourcing are the realistic acquisition paths given the part's EOL status.

📱

Handheld and Portable Instruments

Battery-powered handheld instruments adopted the K9F2808Q0B because its 1.7 V to 1.95 V operation allowed direct connection to single-cell rail systems, minimizing converter stages. Typical read current figures (revised in the datasheet history, originally around 5 mA class) kept average drain low between measurement bursts, while the 50 ns access time let instrument firmware read calibration tables without delaying measurements. The TBGA package withstood portable mechanical stress better than thin plastic leaded packages when properly underfilled. Designers should buffer the R/B output and manage CE during sleep states to minimize standby current in duty-cycled instruments.

🌐

Networking Equipment Configuration Storage

Routers, switches, and access points of the K9F generation stored MAC addresses, configuration files, and failsafe boot images on the K9F2808Q0B. The 16 MB capacity covered a compressed firmware image plus dual-config schemes, and SLC endurance handled frequent configuration writes in the field. The 1.8 V rail matched the low-voltage memory subsystems of networking SoCs of that era, and the TBGA package suited high-density line-card assemblies. Network equipment requires failsafe dual-image designs, so two power-fail-safe update procedures with rollback pointers in spare area were standard practice on this class of raw NAND.

What is the K9F2808Q0B and what are its key specifications?
The K9F2808Q0B is a Samsung Electronics 128 Mbit SLC parallel NAND Flash memory organized as 16M x 8 bits. It operates from a 1.7 V to 1.95 V supply, offers a 50 ns read access time, and is packaged in a 63-pin TBGA. Per the Samsung datasheet, temperature grades C (commercial) and I (industrial) were offered. As an SLC device it stores one bit per cell, giving the widest noise margins and best endurance of any NAND cell type.
What is the operating voltage of the K9F2808Q0B?
The K9F2808Q0B operates from a 1.7 V to 1.95 V supply, according to the Samsung datasheet. This is the 1.8 V variant of the K9F2808 family; the companion K9F2808U0B is the 3.3 V device. Supplying 3.3 V to the Q0B part can damage it, so designers must verify the rail voltage before substitution. Typical read operation current (Icc1) values were revised in the datasheet revision history, so consult the latest revision for current figures.
Is the K9F2808Q0B still in production?
No, the K9F2808Q0B is a legacy device that is no longer in volume production. The Samsung datasheet lists it as a small-block SLC NAND from the early 2000s generation, and modern Samsung NAND lines have long moved to larger-density devices. Availability today is limited to residual distributor stock and excess-inventory channels. For new designs, engineers should select a current-generation SLC or managed NAND part from Samsung's active portfolio.
What is the difference between K9F2808Q0B and K9F2808U0B?
The core difference is supply voltage: the K9F2808Q0B is the 1.8 V device (1.7 V to 1.95 V), while the K9F2808U0B is the 3.3 V device. Both share the same 16M x 8 organization, 128 Mbit SLC NAND architecture, and 50 ns speed class. They are NOT interchangeable because their voltage ratings differ. The datasheet revision history notes the Q0B (1.8 V device) had its typical read operation current (Icc1) revised from 5 mA. Verify package and pinout before any substitution.
What package does the K9F2808Q0B come in?
The K9F2808Q0B is housed in a 63-pin TBGA (tape ball grid array) package, according to the Samsung datasheet. Package ordering suffixes such as CB0 and IB0 in part numbers like K9F2808Q0B-DCB0/DIB0 denote packaging and temperature options. The TBGA format provides a ball-grid interconnect suitable for surface-mount assembly, and the industrial (I) temperature grade supports extended operating environments.
Where can I download the K9F2808Q0B datasheet PDF?
The K9F2808Q0B datasheet PDF (16M x 8 Bit NAND Flash Memory, 29 pages) is available from datasheet archives such as alldatasheet.com and datasheet4u.com. Samsung has retired this legacy part from its active product pages, so third-party archives host the authoritative document. The datasheet covers DC/AC characteristics, command set, timing diagrams, package dimensions, and the revision history including the Icc1 revision for the 1.8 V Q0B variant.
What is the best drop-in replacement for the K9F2808Q0B?
A true drop-in replacement must match the 63-pin TBGA footprint, 1.8 V rail, and 16M x 8 SLC organization. Within the Samsung family, the K9F6408Q0C is the closest same-family candidate, though its 64 Mbit density differs and controller-level changes are needed. No cross-brand pin-compatible equivalent was found in current cross-reference sources for this legacy 63-TBGA device. Most practical replacement paths require PCB or firmware modification, so treat family siblings as functional substitutes rather than pin-for-pin swaps.
K9F2808Q0B vs K9F6408U0B - which should I use?
The K9F2808Q0B offers 128 Mbit at 1.8 V, while the K9F6408U0B offers 64 Mbit at 3.3 V, so the choice depends on both density and supply rail. If your system runs a 1.8 V memory rail and needs full 16 MB storage, the K9F2808Q0B is the only option of the two. If your board is 3.3 V and 8 MB suffices, the K9F6408U0B is more readily sourced. Neither is pin-compatible with the other due to voltage and organization differences; always verify package and command-set timing against the respective datasheets.
Is the K9F2808Q0B suitable for industrial temperature applications?
Yes, within its qualification limits. The Samsung datasheet lists temperature grades C (commercial) and I (industrial) for the K9F2808Q0B, with industrial-grade ordering suffixes such as -DIB0 indicating the extended-temperature option. SLC NAND technology also provides wider operating noise margins than MLC, supporting reliable operation. However, since the part is EOL, industrial users should plan a last-time-buy or a redesign path, and qualification data for legacy industrial builds should be revalidated against current assembly processes.
What ECC requirements apply when using the K9F2808Q0B?
As an SLC NAND device, the K9F2808Q0B requires error-correcting code at the controller level, typically 1-bit error correction per page for SLC-class reliability. NAND Flash blocks develop bit errors over program/erase cycles, so system firmware must implement Hamming-class ECC plus bad-block management and wear leveling. The spare area in each page stores ECC parity and block-management flags. Samsung's application notes for the K9F series small-block NAND family describe the recommended ECC and bad-block management scheme in detail.
How does the 8-bit interface of the K9F2808Q0B work?
The K9F2808Q0B uses an 8-bit multiplexed bidirectional I/O bus on which commands, addresses, and data are time-multiplexed, per the Samsung datasheet. Command Latch Enable (CLE) and Address Latch Enable (ALE) signals tell the device whether the current bus cycle carries a command or an address; Chip Enable (CE), Write Enable (WE), and Read Enable (RE) gate transfers, and R/B (ready/busy) indicates when program or erase operations complete. This multiplexed scheme minimizes pin count, which is why the device fits a 63-ball TBGA.
Where to buy the K9F2808Q0B online?
The K9F2808Q0B is an EOL legacy device, so authorized-line availability is essentially exhausted; sourcing is through excess inventory brokers and datasheet-driven stock exchanges such as datasheet39.com listings. When buying legacy NAND, insist on date-code documentation and test reports, since aged SLC NAND can accumulate bit errors in storage. XAIPART offers quote-based sourcing for this MPN - contact us with your quantity and date-code requirements for a quotation as of 2026-09-04.
What is the price of the K9F2808Q0B?
Pricing for the K9F2808Q0B is quote-based because the part is out of mainstream distribution and no standard unit pricing exists in current distributor catalogs as of 2026-09-04. Legacy SLC NAND of this generation typically trades in the aftermarket at broker-negotiated prices that vary strongly with date code, quantity, and remaining shelf life. For a firm quotation, submit an RFQ specifying quantity and acceptable date codes. Standard quantity-break pricing (1/10/100/1000) cannot be responsibly published without live stock confirmation.
Is the K9F2808Q0B the same as K9F6408Q0C?
No, they are related family members but not the same part. The K9F2808Q0B is a 128 Mbit (16M x 8) device, while the K9F6408Q0C is a 64 Mbit (8M x 8) SLC NAND from the same Samsung K9F small-block family with a similar Q-series 1.8 V rail. The density difference means the block and page counts differ, so controller address maps and firmware sizing must change. A K9F6408Q0C can substitute functionally in systems with 8 MB capacity headroom, but it is not a transparent drop-in for the 128 Mbit part.
What design considerations apply when migrating away from the K9F2808Q0B?
Migration requires addressing supply voltage, package, and command-set compatibility. The 1.8 V rail and 63-pin TBGA footprint are the binding constraints: modern SLC NAND uses different packages (TSOP, BGA with different ball maps) and different page/block geometries, so PCB rework and driver changes are normally required. Alternatively, a managed-NAND or eMMC solution moves ECC and bad-block management into the device, simplifying firmware. Plan for command timing differences, changed spare-area layouts, and re-validated ECC strength during the migration.

Engineering reference data for K9F2808Q0B — comparison, design guidance, and compliance information.

Selection Guide

Choose the K9F2808Q0B when you must maintain an existing design built around its exact 128 Mbit, 16M x 8, 1.8 V, 63-TBGA configuration - typically repair, service stock, or last-time-buy scenarios, since the part is EOL. Choose the K9F6408Q0C for new or revised 1.8 V designs where 8 MB of SLC storage suffices and a family-compatible command set is desired. Choose the K9F2808U0B (3.3 V) only if your memory bus is a 3.3 V rail and you need the identical 16M x 8 organization - never substitute it directly for the Q0B without rail verification. For brand-new designs, none of these legacy small-block parts is recommended: select a current-generation Samsung SLC NAND or a managed-NAND/eMMC solution with integrated ECC and bad-block management, which removes the controller-side firmware burden. All alternatives share the Samsung K9F command architecture, easing driver reuse.

Comparison with Alternatives

Parameter This Product K9F6408Q0C K9F6408U0B K9F2808U0B-DCB0
Package 63-pin TBGA 63-TBGA family - same 63-TBGA family - same 63-TBGA family - same
Brand Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics
Density 128 Mbit (16M x 8) 64 Mbit (8M x 8) 64 Mbit (8M x 8) 128 Mbit (16M x 8)
Supply Voltage 1.7 V to 1.95 V 1.8 V class (Q-series) 3.3 V class (U-series) 3.3 V class (U-series)
Read Access Speed 50 ns [DATA_NEEDED] [DATA_NEEDED] 50 ns class
Cell Type SLC SLC SLC SLC
Temperature Grades C, I [DATA_NEEDED] [DATA_NEEDED] C, I (-DCB0 commercial)
Lifecycle Status EOL EOL (legacy family) EOL (legacy family) EOL (legacy family)

Key Differentiators

  • Full 128 Mbit capacity on a 1.8 V rail (vs K9F6408Q0C)
  • 1.8 V operation vs 3.3 V siblings (vs K9F2808U0B-DCB0)
  • SLC reliability with 50 ns read access (vs K9F6408U0B)

Design Notes

The 8-bit multiplexed I/O bus of the K9F2808Q0B relies on clean CLE/ALE/WE/RE timing; keep command and address latch setup/hold within the datasheet AC limits and keep bus traces short (under ~10 cm at this speed class). Termination is generally unnecessary at 1.8 V NAND speeds, but series resistors of 22-33 ohms on WE/RE damp ringing on longer traces. Ensure R/B is treated as open-drain with a pull-up appropriate to the 1.8 V rail - typically 10 kohm.

Never connect the K9F2808Q0B to a 3.3 V rail - it is the 1.8 V (1.7-1.95 V) member of the K9F2808 family, while the U0B suffix denotes the 3.3 V device. Additionally, raw NAND requires controller-side ECC (1-bit per page for SLC) and bad-block management; writing data without ECC and without marking factory bad blocks will cause silent data corruption. Check the initial bad-block table shipped in the device before first use, per Samsung's small-block NAND application guidance.

Decouple VCC with at least 0.1 uF ceramic close to each supply ball plus 4.7-10 uF bulk capacitance, since program operations draw current pulses on the 1.8 V rail. Estimated: if the revised typical read current is in the several-mA class (datasheet history notes Icc1 was changed from 5 mA), a stable 1.8 V LDO rated at 50-100 mA provides ample margin including program/erase peaks; verify peak program current against the latest datasheet revision before finalizing the regulator.

Compliance Information

RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Unknown
Halogen Free
Unknown
Conflict Minerals
Unknown

This is a legacy EOL part predating modern environmental declarations; Samsung's current compliance databases no longer list it. Verify RoHS/lead status with the specific date code and package suffix when sourcing aftermarket stock.

Data verified on: 2026-09-04 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Samsung Electronics K9F2808Q0B K9F2808U0B K9F6408U0B K9F6408Q0C NAND Flash SLC (Single-Level Cell) flash memory non-volatile memory parallel NAND interface 16M x 8 organization 63-pin TBGA BGA package family 1.8V supply rail ECC (error-correcting code) bad-block management wear leveling RoHS embedded boot storage industrial data logger
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