K9HUGY8J5B-BCK0 vs K9DVGY8J5M Comparison

Detailed side-by-side comparison of K9HUGY8J5B-BCK0 by Samsung Electronics and K9DVGY8J5M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K9HUGY8J5B-BCK0 K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 ✓ Active
Samsung Electronics
K9DVGY8J5M K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M ✓ Active

Specification Comparison

Parameter K9HUGY8J5B-BCK0 K9DVGY8J5M
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.00 $1.00
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9HUG (V-NAND flash) —
Memory Type NAND Flash (3D V-NAND) —
Density [DATA_NEEDED: device density] [DATA_NEEDED: die density (Gb)]
Cell Type [DATA_NEEDED: SLC/MLC/TLC/QLC] —
Organization [DATA_NEEDED: page/block organization] —
Bus Width [DATA_NEEDED: x8 or x16] —
Supply Voltage (VCC) [DATA_NEEDED: VCC range] [DATA_NEEDED: VCC voltage]
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ range] [DATA_NEEDED: VCCQ voltage]
Interface [DATA_NEEDED: asynchronous/toggle DDR] —
Page Program Time [DATA_NEEDED: tPROG] —
Page Read Time [DATA_NEEDED: tR] —
Block Erase Time [DATA_NEEDED: tBERS] —
Endurance [DATA_NEEDED: P/E cycles] —
Package [DATA_NEEDED: package code, e.g. FBGA] —
Operating Temperature [DATA_NEEDED: temperature range] [DATA_NEEDED: operating temperature range]
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant [DATA_NEEDED: RoHS status]
Product Type — Raw NAND Flash Memory
NAND Technology — Samsung V-NAND (3D TLC)
Flash ID — EC519A3F8CCB
Organization (Page/Block) — [DATA_NEEDED: page and block organization]
Interface Type — [DATA_NEEDED: interface (toggle DDR / async)]
Program Page Time (tPROG) — [DATA_NEEDED: tPROG typical/us]
Block Erase Time (tBERS) — [DATA_NEEDED: tBERS typical/us]
Read Time (tR) — [DATA_NEEDED: tR typical/us]
Program/Erase Endurance — [DATA_NEEDED: P/E cycle endurance]
Package Type — [DATA_NEEDED: package type and dimensions]

Datasheets & Resources

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