K9HUGY8J5B-BCK0 vs K9DVGY8J5M Comparação

Comparação detalhada lado a lado de K9HUGY8J5B-BCK0 por Samsung Electronics e K9DVGY8J5M por Samsung Electronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Samsung Electronics
K9HUGY8J5B-BCK0 K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 ✓ Ativo
Samsung Electronics
K9DVGY8J5M K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M ✓ Ativo

Comparação de especificações

Parâmetro K9HUGY8J5B-BCK0 K9DVGY8J5M
Marca Samsung Electronics Samsung Electronics
Categoria Memory ICs Memory ICs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,00 $1,00
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9HUG (V-NAND flash) —
Tipo de memória NAND Flash (3D V-NAND) —
Density [DATA_NEEDED: device density] [DATA_NEEDED: die density (Gb)]
Cell Type [DATA_NEEDED: SLC/MLC/TLC/QLC] —
Organização da memória [DATA_NEEDED: page/block organization] —
Bus Width [DATA_NEEDED: x8 or x16] —
Supply Voltage (VCC) [DATA_NEEDED: VCC range] [DATA_NEEDED: VCC voltage]
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ range] [DATA_NEEDED: VCCQ voltage]
Interface [DATA_NEEDED: asynchronous/toggle DDR] —
Page Program Time [DATA_NEEDED: tPROG] —
Page Read Time [DATA_NEEDED: tR] —
Block Erase Time [DATA_NEEDED: tBERS] —
Endurance [DATA_NEEDED: P/E cycles] —
Encapsulamento [DATA_NEEDED: package code, e.g. FBGA] —
Temperatura de operação [DATA_NEEDED: temperature range] [DATA_NEEDED: operating temperature range]
Tipo de montagem Surface Mount Surface Mount
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Product Type — Raw NAND Flash Memory
NAND Technology — Samsung V-NAND (3D TLC)
Flash ID — EC519A3F8CCB
Organization (Page/Block) — [DATA_NEEDED: page and block organization]
Tipo de interface — [DATA_NEEDED: interface (toggle DDR / async)]
Program Page Time (tPROG) — [DATA_NEEDED: tPROG typical/us]
Block Erase Time (tBERS) — [DATA_NEEDED: tBERS typical/us]
Read Time (tR) — [DATA_NEEDED: tR typical/us]
Program/Erase Endurance — [DATA_NEEDED: P/E cycle endurance]
Package Type — [DATA_NEEDED: package type and dimensions]

Fichas técnicas e recursos

Ver todos os produtos Criar BOM Solicitar cotação