K9HUGY8J5B-BCK0 vs K9DVGY8J5M Vergleich

Detaillierter Direktvergleich von K9HUGY8J5B-BCK0 von Samsung Electronics und K9DVGY8J5M von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Samsung Electronics
K9HUGY8J5B-BCK0 K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 ✓ Aktiv
Samsung Electronics
K9DVGY8J5M K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M ✓ Aktiv

Spezifikationsvergleich

Parameter K9HUGY8J5B-BCK0 K9DVGY8J5M
Marke Samsung Electronics Samsung Electronics
Kategorie Memory ICs Memory ICs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,00 $1,00
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9HUG (V-NAND flash) —
Speichertyp NAND Flash (3D V-NAND) —
Density [DATA_NEEDED: device density] [DATA_NEEDED: die density (Gb)]
Cell Type [DATA_NEEDED: SLC/MLC/TLC/QLC] —
Speicherorganisation [DATA_NEEDED: page/block organization] —
Bus Width [DATA_NEEDED: x8 or x16] —
Supply Voltage (VCC) [DATA_NEEDED: VCC range] [DATA_NEEDED: VCC voltage]
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ range] [DATA_NEEDED: VCCQ voltage]
Schnittstelle [DATA_NEEDED: asynchronous/toggle DDR] —
Page Program Time [DATA_NEEDED: tPROG] —
Page Read Time [DATA_NEEDED: tR] —
Block Erase Time [DATA_NEEDED: tBERS] —
Endurance [DATA_NEEDED: P/E cycles] —
Gehäuse [DATA_NEEDED: package code, e.g. FBGA] —
Betriebstemperatur [DATA_NEEDED: temperature range] [DATA_NEEDED: operating temperature range]
Montageart Surface Mount Surface Mount
RoHS-Status Compliant [DATA_NEEDED: RoHS status]
Product Type — Raw NAND Flash Memory
NAND Technology — Samsung V-NAND (3D TLC)
Flash ID — EC519A3F8CCB
Organization (Page/Block) — [DATA_NEEDED: page and block organization]
Schnittstellentyp — [DATA_NEEDED: interface (toggle DDR / async)]
Program Page Time (tPROG) — [DATA_NEEDED: tPROG typical/us]
Block Erase Time (tBERS) — [DATA_NEEDED: tBERS typical/us]
Read Time (tR) — [DATA_NEEDED: tR typical/us]
Program/Erase Endurance — [DATA_NEEDED: P/E cycle endurance]
Package Type — [DATA_NEEDED: package type and dimensions]

Datenblätter & Ressourcen

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