K9LCG08U1M vs K9F2808Q0B Comparison
Detailed side-by-side comparison of K9LCG08U1M by Samsung Electronics and K9F2808Q0B by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K9F2808Q0B - 128Mb SLC NAND Flash 1.8V 63-TBGA | Samsung
K9F2808Q0B ✗ End of LifeSpecification Comparison
| Parameter | K9LCG08U1M | K9F2808Q0B |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Flash | Memory ICs |
| Lifecycle Status | Active | End of Life |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $11.85 | $0.00 |
| Memory Type | NAND Flash, MLC | SLC NAND Flash (parallel) |
| Density | 64 Gbit (8 GB) | 128 Mbit |
| Organization | x8 I/O | 16M x 8 |
| Interface | Asynchronous multiplexed NAND I/O | 8-bit multiplexed address/data |
| Cell Type | MLC (2 bits per cell) | SLC (1 bit/cell) |
| Package | BGA | 63-pin TBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Supply Voltage | [DATA_NEEDED: supply voltage] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | — |
| RoHS Status | unknown | unknown |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB | — |
| Operating Voltage (VCC) | — | 1.7 V to 1.95 V |
| Read Access Speed | — | 50 ns |
| Temperature Grade | — | C (commercial), I (industrial) |
| Typical Read Current (Icc1) | — | [DATA_NEEDED: Icc1] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |
| Production Status | — | Mass production (per legacy datasheet); now EOL/obsolete |